Argon is used in sputtering primarily due to its high sputtering rate, inert nature, low price, and availability of pure gas. These properties make it an ideal choice for the incident charged particles in various sputtering processes.
High Sputtering Rate: Argon, being a rare gas element with a relatively high atomic mass, provides a high sputtering rate. This is crucial in the deposition process as it directly affects the speed and efficiency of film formation. The high atomic mass of argon means that when it is ionized and accelerated towards the target, it transfers significant momentum upon impact, leading to efficient ejection of target atoms.
Inert Nature: Argon is chemically inert, meaning it does not readily react with other elements. This is particularly important in sputtering because it minimizes the risk of unwanted chemical reactions between the sputtering gas and the target material or the growing film. This ensures that the deposited film maintains the desired chemical composition and properties.
Low Price and Availability: Argon is relatively inexpensive compared to other rare gases like krypton and xenon. Its widespread availability and low cost make it a practical choice for industrial and laboratory applications. This economic factor is significant, especially in large-scale manufacturing processes where the cost of materials can significantly impact the overall production cost.
Pure Gas Availability: The availability of argon in high purity is another advantage. High purity is essential to prevent impurities from affecting the quality of the deposited film. Impurities can degrade the film's properties, such as its electrical conductivity or optical transparency.
In summary, argon's combination of high sputtering efficiency, chemical inertness, cost-effectiveness, and purity makes it the preferred choice for many sputtering applications. Its use is widespread across different types of sputtering processes, including DC, RF, and magnetron sputtering, where it contributes to the high-quality deposition of thin films.
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