Yes, SiO2 can be sputtered. This is achieved through a process called reactive sputtering, where silicon (Si) is used as the target material in the presence of a non-inert gas, specifically oxygen (O2). The interaction between the sputtered silicon atoms and the oxygen gas within the sputtering chamber leads to the formation of silicon dioxide (SiO2) as a thin film.
Explanation of Reactive Sputtering: Reactive sputtering is a technique used in thin film deposition where a reactive gas, such as oxygen, is introduced into the sputtering environment. In the case of forming SiO2, a silicon target is placed in the sputtering chamber, and oxygen gas is introduced. When the silicon is sputtered, the ejected atoms react with the oxygen to form SiO2. This process is crucial for obtaining the desired chemical composition and properties in the thin film.
Customization of Refractive Index: The reference also mentions co-sputtering, which involves using multiple targets in the sputtering chamber. For instance, by co-sputtering silicon and titanium targets in an oxygen-rich environment, it is possible to create films with a customized refractive index. The power applied to each target can be varied to adjust the composition of the deposited film, thus controlling the refractive index between the values typical for SiO2 (1.5) and TiO2 (2.4).
Advantages of Sputtering: Sputtering is favored over other deposition methods due to its ability to produce films with good adhesion to substrates and its capability to handle materials with high melting points. The process can be performed from the top down, which is not possible with evaporation deposition. Additionally, sputtering systems can be equipped with various options such as in situ cleaning or substrate preheating, enhancing the quality and functionality of the deposited films.
Manufacturing of Silicon Sputtering Targets: Silicon sputtering targets are manufactured from silicon ingots using various methods including electroplating, sputtering, and vapor deposition. These targets are designed to have high reflectivity and low surface roughness, ensuring the production of high-quality SiO2 films with low particle counts. The process may also include additional cleaning and etching steps to optimize the surface conditions of the targets.
In summary, SiO2 can be effectively produced through reactive sputtering, a process that allows for precise control over the chemical composition and properties of the deposited film. This method is versatile, capable of handling high-melting-point materials, and can be customized to achieve specific film properties such as refractive index.
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