The frequency used in RF sputtering is typically in the range of 5-30 MHz, with 13.56 MHz being the most common frequency. This frequency is chosen due to its allocation for industrial, scientific, and medical (ISM) instruments by the ITU Radio Regulations, ensuring it does not interfere with telecommunication services. Additionally, 13.56 MHz is low enough to allow sufficient time for the momentum transfer of argon ions to the target, which is crucial for the sputtering process.
The choice of 13.56 MHz is strategic for several reasons:
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ISM Band Allocation: The International Telecommunication Union (ITU) has designated 13.56 MHz as part of the ISM band, specifically for industrial, scientific, and medical applications. This designation helps prevent interference with other radio frequency communications, ensuring that the sputtering process can operate without disrupting or being disrupted by other RF-based technologies.
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Momentum Transfer Efficiency: At this frequency, the time scale is conducive to the efficient transfer of momentum from argon ions to the target material. This is critical because if the frequency were higher, the ions would not have enough time to effectively transfer their momentum, potentially leading to less efficient sputtering.
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Electron Dynamics: The frequency of 13.56 MHz is also balanced in terms of electron dynamics. At higher frequencies, electrons become more dominant in the sputtering process, which can alter the deposition characteristics, making it more similar to electron beam evaporation. By using 13.56 MHz, the process maintains a balance where both ions and electrons play significant roles, but the ions are not immobilized, ensuring effective sputtering.
In summary, the frequency of 13.56 MHz in RF sputtering is a result of both regulatory compliance and practical considerations related to the physics of ion and electron interactions during the sputtering process. This frequency ensures efficient and interference-free operation of the sputtering system, making it ideal for the deposition of thin films, especially for non-conductive materials.
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