Target poisoning in sputtering refers to the formation of an insulating oxide layer on the target surface outside the metallic racetrack area.
This occurs when the target material, especially if it is reactive, interacts with the sputtering environment and forms a non-conductive layer.
Summary of the Answer: Target poisoning is the development of an insulating oxide layer on the target surface, which can lead to arcing and disrupt the sputtering process.
This condition requires the use of pulsing techniques to prevent arcing on the dielectric surface of the poisoned target.
Detailed Explanation:
1. Formation of the Insulating Oxide Layer
During the sputtering process, the target material is bombarded with ions, causing atoms to be ejected and deposited as a thin film on the substrate.
If the target material is reactive, it can react with the sputtering environment, typically oxygen or other reactive gases present in the chamber, leading to the formation of an oxide layer.
This layer is non-conductive and forms outside the metallic racetrack area on the target surface.
2. Impact on Sputtering Process
The presence of this insulating oxide layer can significantly affect the sputtering process.
It can cause arcing, which is a sudden release of electrical energy due to the high voltage applied across the target and the substrate.
Arcing can damage the target, the substrate, and the coating, leading to defects and poor film quality.
3. Prevention and Mitigation
To prevent or mitigate the effects of target poisoning, pulsing techniques are often employed.
Pulsing involves modulating the power supply to the sputtering process, which can help to break down the insulating layer and prevent the buildup of charge that leads to arcing.
Additionally, maintaining a clean and controlled sputtering environment can reduce the likelihood of target poisoning.
4. Disappearing Anode Effect
Over time, the deposition of insulating material not only affects the target but also coats the inside of the PVD system, leading to the disappearing anode effect.
This effect changes the process conditions during deposition, making the chamber less effective as a grounded anode.
To counteract this, dual magnetron sputtering is used, which can help maintain the conductive path and prevent the buildup of insulating material.
In summary, target poisoning in sputtering is a critical issue that arises from the formation of an insulating oxide layer on the target surface, which can disrupt the sputtering process and lead to arcing.
Effective mitigation strategies include the use of pulsing techniques and maintaining a controlled sputtering environment.
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