The sputtering yield of a target is the average number of atoms ejected from the target per incident ion. This yield depends on several factors including the kinetic energy and mass of the ions, the mass of the target atoms, the binding energy of the surface atoms, the angle of incidence of the ions, and the energy with which the ions strike the target.
Factors Affecting Sputtering Yield:
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Kinetic Energy and Mass of Ions: The sputtering yield increases with the energy and mass of the incident ions. There is a minimum energy threshold (typically 30-50 eV) required to eject an atom from the target. Above this threshold, the yield initially increases rapidly but then flattens as the ion energy increases, because higher energy ions deposit their energy deeper into the target, reducing the effectiveness at the surface.
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Mass of Target Atoms: The ratio of the masses of the ion and target atom influences the momentum transfer. For light target atoms, maximum yield is achieved when the mass of the target and ion are approximately equal. However, as the mass of the target atoms increases, the optimal mass ratio shifts towards higher mass ions.
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Binding Energy of Surface Atoms: The binding energy between the atoms of the target material also plays a crucial role. Higher binding energies require more energy to dislodge atoms, thus affecting the sputtering yield.
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Angle of Incidence: The angle at which ions strike the surface of the target material can significantly affect the sputtering yield. Typically, steeper angles can enhance the yield due to more direct energy transfer to surface atoms.
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Other Factors: Additional factors such as the presence of a magnetic field (in magnetron sputtering), plasma gas pressure, and the specific sputtering technique (e.g., ion beam, reactive sputtering) can also influence the sputtering yield.
Sputtering Yield in Practice: In practical applications, such as sputter deposition, the sputtering yield is crucial as it directly affects the deposition rate. The yield can vary widely depending on the target material and the conditions of the sputtering process. For example, at an ion energy of 600 eV, different materials will exhibit different sputtering yields, which are influenced by the factors mentioned above.
Conclusion: The sputtering yield is a complex parameter determined by the interaction of incident ions with the target material. Understanding and controlling these interactions is essential for optimizing sputtering processes in various industrial and research applications.
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