The gas typically used as a carrier gas for aluminum (Al) deposition using the sputtering system is Argon (Ar) gas. Argon gas is commonly used as the sputtering gas in the sputtering chamber, where it creates a plasma that bombards a target material, such as aluminum, in order to eject the material's atoms into the vacuum. The atoms from the aluminum target are then deposited onto the substrate to form a thin film of aluminum. Argon gas is preferred as the carrier gas because it is inert and does not react chemically with the target material. Additionally, the atomic weight of argon is close to that of aluminum, allowing for efficient momentum transfer during the sputtering process.
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