The primary difference between RF sputtering and DC sputtering lies in their power sources.
DC sputtering uses a direct current as its power source.
RF sputtering uses an alternating current (AC) power source.
This difference in power sources leads to several distinctions between the two sputtering techniques.
4 Key Points to Understand the Difference Between RF Sputtering and DC Sputtering
1. Voltage Requirement
DC sputtering typically requires 2,000-5,000 volts.
RF sputtering requires 1,012 volts or higher to achieve the same deposition rate.
This is because DC sputtering involves direct ion bombardment of the gas plasma by electrons.
RF sputtering uses kinetic energy to remove electrons from the outer shells of gas atoms.
The creation of radio waves in RF sputtering requires more power supply to achieve the same effect as an electron current.
2. Chamber Pressure
RF sputtering can maintain the gas plasma at a significantly lower chamber pressure of under 15 mTorr.
DC sputtering requires a chamber pressure of 100 mTorr.
This lower pressure helps reduce the number of collisions between the charged plasma particles and the target material.
It creates a more direct pathway to the sputter target.
3. Applicability
DC sputtering is widely used, effective, and economical.
It is suitable for the processing of large substrate quantities.
RF sputtering works for both conductive and non-conductive sputtered materials.
It is more expensive and has a lower sputter yield.
It is more suitable for lower substrate sizes.
4. Summary of Differences
RF sputtering uses an AC power source, requires higher voltage, operates at lower chamber pressure, and is suitable for both conductive and non-conductive materials.
DC sputtering uses a DC power source, requires lower voltage, operates at higher chamber pressure, and is more economical for processing large substrate quantities.
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