The primary difference between RF sputtering and DC sputtering lies in their power sources. DC sputtering uses a direct current as its power source, while RF sputtering uses an alternating current (AC) power source. This difference in power sources leads to several distinctions between the two sputtering techniques.
1. Voltage Requirement: DC sputtering typically requires 2,000-5,000 volts, whereas RF sputtering requires 1,012 volts or higher to achieve the same deposition rate. This is because DC sputtering involves direct ion bombardment of the gas plasma by electrons, while RF sputtering uses kinetic energy to remove electrons from the outer shells of gas atoms. The creation of radio waves in RF sputtering requires more power supply to achieve the same effect as an electron current.
2. Chamber Pressure: RF sputtering can maintain the gas plasma at a significantly lower chamber pressure of under 15 mTorr, compared to the 100 mTorr required for DC sputtering. This lower pressure helps reduce the number of collisions between the charged plasma particles and the target material, creating a more direct pathway to the sputter target.
3. Applicability: DC sputtering is widely used, effective, and economical. It is suitable for the processing of large substrate quantities. On the other hand, RF sputtering works for both conductive and non-conductive sputtered materials. It is more expensive and has a lower sputter yield, making it more suitable for lower substrate sizes.
In summary, the main differences between RF sputtering and DC sputtering lie in their power sources, voltage requirements, chamber pressures, and applicability. RF sputtering uses an AC power source, requires higher voltage, operates at lower chamber pressure, and is suitable for both conductive and non-conductive materials. DC sputtering uses a DC power source, requires lower voltage, operates at higher chamber pressure, and is more economical for processing large substrate quantities.
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