The energy range of sputtering typically starts from a threshold of about ten to a hundred electron volts (eV) and can extend to several hundred eV, with an average energy often an order of magnitude above the surface binding energy.
Detailed Explanation:
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Threshold Energy for Sputtering: Sputtering occurs when an ion transfers enough energy to a target atom to overcome its binding energy at the surface. This threshold is typically between 10 to 100 eV. Below this range, the energy transfer is insufficient to eject atoms from the target material.
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Energy of Sputtered Atoms: The kinetic energy of sputtered atoms varies widely but is generally more than tens of electron volts, often around 600 eV. This high energy is due to the momentum exchange during ion-atom collisions. Approximately 1% of the ions hitting the surface cause re-sputtering, where atoms are ejected back to the substrate.
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Sputter Yield and Energy Dependence: The sputter yield, which is the average number of atoms ejected per incident ion, depends on several factors including the angle of ion incidence, ion energy, atomic weights, binding energy, and plasma conditions. The energy distribution of sputtered atoms peaks at about half the surface binding energy but extends to higher energies, with an average energy often significantly above the threshold.
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Types of Sputtering and Energy Levels:
- DC Diode Sputtering: Uses a DC voltage of 500-1000 V, with argon ions transferring energy to target atoms at energies within this range.
- Ion Beam Sputtering: Involves higher energies, with an average sputtering energy of 10 eV, which is much higher than thermal energies and typical of vacuum evaporation.
- Electronic Sputtering: Can involve very high energies or highly charged heavy ions, leading to high sputtering yields, particularly in insulators.
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Applications and Energy Requirements: Sputtering is used in various applications, including thin film deposition, where the high kinetic energy of sputtered atoms helps in the formation of high-quality, well-adhered films. The process typically requires kinetic energies much higher than thermal energies, often achieved using DC voltages of 3-5 kV or RF frequencies around 14 MHz.
In summary, the energy range for sputtering spans from a minimum threshold of about 10-100 eV up to several hundred eV, depending on the specific type of sputtering and the conditions under which it is performed. This wide energy range allows for the versatile application of sputtering in various technological processes.
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