The current of sputtering ions in a sputtering process is determined by the voltage applied and the type of sputtering technique used. In DC diode sputtering, a DC voltage of 500 - 1000 V is applied, which ignites an argon low-pressure plasma between a target and a substrate. Positive argon ions are then accelerated towards the target due to this voltage, causing atoms to be ejected from the target and deposited onto the substrate.
In RF sputtering, an alternating current with frequencies around 14 MHz is used. This allows for the sputtering of insulating materials, as the electrons can be accelerated to oscillate with the RF, while the heavier ions react only to the average voltage generated in the RF system. The ions are affected by the self-bias voltage (VDC) that accelerates them to the target, which approaches the equivalent voltage applied during DC sputtering.
The current of sputtering ions is directly related to the voltage applied and the type of sputtering technique used. In DC diode sputtering, the current is determined by the 500 - 1000 V DC voltage, while in RF sputtering, the current is determined by the self-bias voltage (VDC) that accelerates the ions to the target.
Experience the precision and efficiency of state-of-the-art sputtering solutions from KINTEK SOLUTION. Our cutting-edge technologies, including DC diode and RF sputtering systems, are designed to optimize ion currents and achieve superior deposition processes. Discover the power of controlled voltage applications and push your research to new heights with our advanced sputtering techniques. Elevate your laboratory’s capabilities today with KINTEK SOLUTION – where innovation meets precision.
