Plasma in sputtering is created through a process called gas ionization, which involves the introduction of a low-pressure inert gas, typically argon, into a vacuum chamber. A high voltage is then applied to the gas, ionizing the atoms and creating a plasma. The voltage required depends on the gas used and the gas pressure, with argon typically requiring around 15.8 electron volts (eV) for ionization.
The plasma generation is crucial for the sputtering process as it enables the bombardment of the target material with gas ions. When the plasma is generated near the target material, the gas ions collide with the target surface, dislodging atoms from the surface and causing them to be ejected into the gas phase. These ejected atoms then travel through the low-pressure sputtering gas to reach the substrate, where they condense and form a thin film.
The efficiency of the sputtering process, characterized by the number of target atoms ejected per incident ion, is influenced by several factors including the mass of the ions, the angle of incidence, target atoms, and incident ion energy. The sputtering yield, which varies for different sputtering conditions and target materials, is a key parameter that determines the effectiveness of the process.
In magnetron sputtering, a specific type of plasma vapor deposition (PVD), a plasma is created and positively charged ions from the plasma are accelerated by an electrical field towards a negatively charged electrode or "target". The positive ions, accelerated by potentials ranging from a few hundred to a few thousand electron volts, strike the target with sufficient force to dislodge and eject atoms. These atoms are ejected in a line-of-sight cosine distribution from the face of the target and will condense on surfaces placed in proximity to the magnetron sputtering cathode.
The sputtering rate, which is the number of monolayers per second sputtered from the surface of a target, is determined by the sputter yield, molar weight of the target, material density, and ion current density. This rate can be controlled by regulating various sputtering conditions such as the applied power/voltage, the sputtering gas pressure, and the distance between the substrate and the target, thereby influencing the properties of the deposited thin film, including its composition and thickness.
Discover the cutting-edge solutions for your sputtering and thin-film deposition needs with KINTEK SOLUTION. Our advanced plasma generation systems, precision-tuned for optimal sputtering yields and deposition rates, are designed to enhance the efficiency and quality of your research and production processes. Elevate your plasma vapor deposition with KINTEK SOLUTION – where innovation meets precision. Contact us today for a demonstration of how our technologies can revolutionize your thin-film applications!
