Plasma in sputtering is created through a process called gas ionization.
This involves the introduction of a low-pressure inert gas, typically argon, into a vacuum chamber.
A high voltage is then applied to the gas, ionizing the atoms and creating a plasma.
The voltage required depends on the gas used and the gas pressure, with argon typically requiring around 15.8 electron volts (eV) for ionization.
How Plasma is Created in Sputtering: 5 Key Steps Explained
1. Introduction of Inert Gas
The first step involves introducing a low-pressure inert gas, usually argon, into a vacuum chamber.
2. Application of High Voltage
A high voltage is applied to the gas, which ionizes the atoms and creates a plasma.
3. Plasma Generation Near the Target Material
The plasma generation is crucial for the sputtering process as it enables the bombardment of the target material with gas ions.
When the plasma is generated near the target material, the gas ions collide with the target surface, dislodging atoms from the surface and causing them to be ejected into the gas phase.
4. Ejection and Travel of Atoms
These ejected atoms then travel through the low-pressure sputtering gas to reach the substrate, where they condense and form a thin film.
5. Formation of Thin Film
The efficiency of the sputtering process, characterized by the number of target atoms ejected per incident ion, is influenced by several factors including the mass of the ions, the angle of incidence, target atoms, and incident ion energy.
The sputtering yield, which varies for different sputtering conditions and target materials, is a key parameter that determines the effectiveness of the process.
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