MPCVD
Bell-jar Resonator MPCVD Diamond Machine for lab and diamond growth
Item Number : KTMP315
Price varies based on specs and customizations
- Microwave Power
- Microwave frequency 2450±15MHZ
- Output power
- 1～10 KW continuously adjustable
- Microwave leakage
- ≤2MW/cm2
- Output wave guide interface
- WR340, 430 with FD-340, 430 standard flange
- Sample holder
- Diameter of sample table≥70mm, effective use area≥64 mm
Shipping:
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MPCVD means Microwave Plasma Chemical Vapor Deposition. It grows quality diamond films in labs using carbon gas and microwave plasma.
MPCVD System
MPCVD is a system for depositing thin films onto a substrate using a vacuum chamber, microwave generator, and gas delivery system. A plasma is generated inside the chamber by a magnetron or klystron generating microwaves at 2.45 GHz. The gas delivery system has MFCs calibrated in sccm to control gas flow. The substrate temperature is controlled by the plasma and measured by a thermocouple. The plasma heats the substrate and the temperature is monitored during deposition.
Applications
MPCVD shows promise for producing large, high-quality diamonds at a low cost.
Diamond's unique properties, such as hardness, stiffness, high thermal conductivity, low thermal expansion, radiation-hardness, and chemical inertness, make it a valuable material. However, the high cost, limited size, and difficulty controlling impurities of natural and synthetic high-pressure, high-temperature diamonds have limited their applications.
MPCVD is the primary equipment for growing diamond gemstones and films, which can be either monocrystal or poly-crystalline. The semi-conductor industry uses diamond film growth extensively for large-size diamond substrates, as well as the diamond cutting or drilling tools industry.
Compared to the HPHT method for lab-grown diamonds, the microwave CVD method is advantageous for large-sized diamond growth at a lower cost, making it an ideal solution for semi-conductor diamonds, optics diamond growth, and the large jewelry diamond market.
Advantages of MPCVD
MPCVD is a diamond synthesis method with advantages over HFCVD and DC-PJ CVD. It avoids contamination and allows for multiple gases. It offers smooth microwave power adjustment and stable temperature control, avoiding seed crystal loss. MPCVD is promising for industrial applications due to a large, stable plasma area.
MPCVD produces purer diamonds using less energy than HPHT. It also enables production of larger diamonds.
Advantages of Our MPCVD System
We have been deeply involved in the industry for many years, and as a result, we have a vast customer base who trust and use our equipment. Our MPCVD equipment has been running steadily for over 40,000 hours, demonstrating exceptional stability, reliability, repeatability, and cost-effectiveness. More advantages of our MPCVD system include:
- 3 inches substrate growing area, max. batch load up to 45 pieces diamonds
- 1-10Kw adjustable output microwave power for less electricity consumption
- Rich experienced researching team with frontier diamond growing recipe support
- Exclusive technical support program for Zero diamond growing experience team
By leveraging our accumulated advanced technology, we have implemented multiple rounds of upgrades and improvements to our MPCVD system, resulting in significantly improved efficiency and reduced equipment costs. As a result, our MPCVD equipment is at the forefront of technological advancements and offered at a competitive price. Welcome to consult with us.
Working Processing
The MPCVD machine controls the flow of each gas path and cavity pressure while introducing reactant gases (such as CH4, H2, Ar, O2, N2, etc.) into the cavity under specific pressure. After stabilizing the airflow, the 6KW solid-state microwave generator generates microwaves that are then introduced into the cavity through the waveguide.
The reaction gas transforms into a plasma state under the microwave field, forming a plasma ball that hovers above the diamond substrate. The high temperature of the plasma heats the substrate to a specific temperature. Excess heat produced in the cavity is dissipated by the water cooling unit.
To ensure optimal growth conditions during the MPCVD single crystal diamond growth process, we adjust factors such as power, gas source composition, and cavity pressure. Furthermore, since the plasma ball doesn't contact the cavity wall, the diamond growth process is free from impurities, thereby enhancing the diamond's quality.
Detail & Parts
Microwave system
Reaction chamber
Gas flow system
Vacuum and sensor system
Technical specifications
| Microwave system |
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| Reaction chamber |
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| Sample holder |
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| Gas flow system |
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| Cooling system |
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| Temperature sensor |
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| Control system |
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| Optional function |
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Warnings
Operator safety is the top important issue! Please operate the equipment with cautions. Working with inflammable& explosive or toxic gases is very dangerous, operators must take all necessary precautions before starting the equipment. Working with positive pressure inside the reactors or chambers is dangerous, operator must fellow the safety procedures strictly. Extra caution must also be taken when operating with air-reactive materials, especially under vacuum. A leak can draw air into the apparatus and cause a violent reaction to occur.
Designed for You
KinTek provide deep custom made service and equipment to worldwide customers, our specialized teamwork and rich experienced engineers are capable to undertake the custom tailoring hardware and software equipment requirements, and help our customer to build up the exclusive and personalized equipment and solution!
Would you please drop your ideas to us, our engineers are ready for you now!
FAQ
What is CVD furnace?
Chemical vapor deposition (CVD) is a technology that uses various energy sources such as heating, plasma excitation or light radiation to chemically react gaseous or vapor chemical substances on the gas phase or gas-solid interface to form solid deposits in the reactor by means of chemical reaction.To put it simply, two or more gaseous raw materials are introduced into a reaction chamber, and then they react with each other to form a new material and deposit it on the substrate surface.
CVD furnace is one combined furnace system with high temperature tube furnace unit,gases control unit, and vacuum unit, it is widely used for experiment and production of composite material preparation, microelectronics process, semiconductor optoelectronic, solar energy utilization, optical fiber communication, superconductor technology, protective coating field.
How does CVD furnace work?
CVD furnace system consists of high temperature tube furnace unit, reacting gas source precise control unit, vacuum pump station and corresponding assembling parts.
Vacuum pump is to remove the air from the reacting tube,and make sure there is no unwanted gases inside the reaction tube, after that the tube furnace will heat the reaction tube to a target temperature, then reacting gas source precise control unit can introduce different gases with a set ratio into the furnace tube for the chemical reaction, the chemical vapor deposition will be formed in the CVD furnace.
What is Mpcvd?
What is CVD diamond machine?
What types of diamond growth machines are available?
What is the basic principle of CVD?
What are the methods used to deposit thin films?
Which gas is used in CVD process?
There are tremendous gas sources can be used in the CVD process, the common chemical reactions of CVD includes Pyrolysis, photolysis, reduction, oxidation, redox,so the gases involved in these chemical reactions can be used in the CVD process.
We take CVD Graphene growth for an example, the gases used in the CVD process will be CH4,H2,O2 and N2.
What is Mpcvd machine?
How does a CVD diamond machine work?
What are the advantages of lab grown diamonds?
What are the different types of CVD method?
What is thin film deposition equipment?
What is the advantage of CVD system?
- Wide range of films can be produced, metal film, nonmetal film and multi-component alloy film as required. At the same time, it can prepare high-quality crystals that are difficult to obtain by other methods, such as GaN, BP, etc.
- The film forming speed is fast, usually several microns per minute or even hundreds of microns per minute. It is possible to simultaneously deposit large quantities of coatings with uniform composition, which is incomparable to other film preparation methods, such as liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE).
- The working conditions are carried out under normal pressure or low vacuum conditions, so the coating has good diffraction, and the workpieces with complex shapes can be uniformly coated, which is much superior to PVD.
- Due to the mutual diffusion of reaction gas, reaction product and substrate, a coating with good adhesion strength can be obtained, which is crucial for preparing surface strengthened films such as wear-resistant and anti-corrosion films.
- Some films grow at a temperature far lower than the melting point of the film material. Under the condition of low temperature growth, the reaction gas and reactor wall and impurities contained in them almost do not react, so a film with high purity and good crystallinity can be obtained.
- Chemical vapor deposition can obtain a smooth deposition surface. This is because compared with LPE, chemical vapor deposition (CVD) is carried out under high saturation, with high nucleation rate, high nucleation density, and uniform distribution on the whole plane, resulting in a macroscopic smooth surface. At the same time, in chemical vapor deposition, the average free path of molecules (atoms) is much larger than LPE, so the spatial distribution of molecules is more uniform, which is conducive to the formation of a smooth deposition surface.
- Low radiation damage, which is a necessary condition for manufacturing metal oxide semiconductors (MOS) and other devices
What are the advantages of Mpcvd?
What are the advantages of using CVD diamond machines?
What is the price of CVD growing machine?
What are the advantages of using chemical vapor deposition machines?
What is thin-film deposition technology?
What does PECVD stand for?
PECVD is a technology that uses plasma to activate reaction gas, promote chemical reaction on the surface of substrate or near surface space, and generate solid film. The basic principle of plasma chemical vapor deposition technology is that under the action of RF or DC electric field, the source gas is ionized to form a plasma, the low-temperature plasma is used as the energy source, an appropriate amount of reaction gas is introduced, and the plasma discharge is used to activate the reaction gas and realize chemical vapor deposition.
According to the method of generating plasma, it can be divided into RF plasma, DC plasma and microwave plasma CVD, etc...
Are CVD diamonds real or fake?
What considerations should be made when selecting a CVD diamond machine?
What are the applications of chemical vapor deposition machines?
What are the advantages of using thin film deposition equipment?
What is the difference between CVD and PECVD?
The difference between PECVD and traditional CVD technology is that the plasma contains a large number of high-energy electrons, which can provide the activation energy required in the chemical vapor deposition process, thus changing the energy supply mode of the reaction system. Since the electron temperature in the plasma is as high as 10000K, the collision between electrons and gas molecules can promote the chemical bond breaking and recombination of the reaction gas molecules to generate more active chemical groups, while the whole reaction system maintains a lower temperature.
So compared to the CVD process, PECVD can carry out the same chemical vapor deposition process with a lower temperature.
What are the common applications of diamonds produced by CVD diamond machines?
What factors should be considered when selecting a chemical vapor deposition machine?
What factors should be considered when selecting thin film deposition equipment?
Can chemical vapor deposition machines be used for multi-layered thin film deposition?
What safety considerations are associated with operating thin film deposition equipment?
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