CVD & PECVD Furnace
Inclined rotary plasma enhanced chemical deposition (PECVD) tube furnace machine
Item Number : KT-PE16
Price varies based on specs and customizations
- Max. temperature
- 1600 ℃
- Constant work temperature
- 1550 ℃
- Furnace tube diameter
- 60 mm
- Heating zone length
- 2x300 mm
- Heating rate
- 0-10 ℃/min
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Introduction
The Inclined Rotary Plasma Enhanced Chemical Deposition (PECVD) Tube Furnace Machine is a plasma-enhanced rotary chemical vapor deposition system that uses a rotating furnace tube and plasma generator to induce chemical reactions in a gaseous discharge. This process produces a wide variety of chemical species that can be used to form solid deposits on materials. The machine is equipped with a three-way mass flow meter and a gas mixing device, which allows for precise control of the gases used in the process. The rotating furnace tube ensures uniform heating and mixing of materials, while the plasma generator provides the activation energy needed for chemical reactions. The machine is also equipped with a high-performance mechanical pump that can quickly evacuate the furnace tube to vacuum.
Applications
PECVD tube furnace machines are used in a variety of applications, including:
- Semiconductor manufacturing:** PECVD is used to deposit thin films of materials such as silicon nitride, silicon dioxide, and polysilicon on semiconductor wafers.
- Solar cell manufacturing:** PECVD is used to deposit thin films of materials such as cadmium telluride and copper indium gallium selenide on solar cells.
- Flat panel display manufacturing:** PECVD is used to deposit thin films of materials such as indium tin oxide and zinc oxide on flat panel displays.
- Optical coating:** PECVD is used to deposit thin films of materials such as titanium dioxide and silicon nitride on optical components.
- Medical device manufacturing:** PECVD is used to deposit thin films of materials such as hydroxyapatite and titanium nitride on medical devices.
Principle
Inclined Rotary Plasma Enhanced Chemical Deposition (PECVD) Tube Furnace Machine is a plasma-enhanced rotary chemical vapor deposition system. The furnace tube adopts a variable-diameter design with a mixing baffle, allowing for uniform heating and efficient mixing of materials. The plasma generator connected via inductive coupling covers the furnace tube, providing increased activation energy, lowering reaction temperature, and improving efficiency. The equipment utilizes a three-way mass flow meter and gas mixing device for precise gas control. Additionally, a high-performance mechanical pump enables rapid evacuation of the furnace tube, creating a vacuum environment suitable for various CVD processes.
Features
The Inclined Rotary Plasma Enhanced Chemical Deposition (PECVD) Tube Furnace Machine boasts an array of cutting-edge features that empower researchers and engineers to achieve unparalleled results in their materials processing endeavors:
- Precise Temperature Control: PID programmable temperature control ensures exceptional accuracy and stability, enabling precise heating and cooling cycles for optimal material properties.
- Versatile Plasma Source: The RF plasma source with an extensive power range of 5-500W provides flexibility and control over plasma generation, promoting efficient and tailored material deposition.
- Uniform Mixing and Heating: The rotating furnace tube, featuring a variable-diameter design and mixing baffle, ensures thorough mixing of materials and uniform heating, resulting in consistent and high-quality deposition results.
- Automated Sliding System: The furnace chamber's sliding system facilitates rapid heating and cooling, minimizing processing time and enhancing productivity.
- Precise Gas Control: High-precision MFC mass flowmeters and a gas mixing device enable precise control of gas composition and flow rates, optimizing deposition processes for specific materials and applications.
- Robust Construction: The stainless steel vacuum flange with adaptable ports ensures reliable sealing and high vacuum levels, maintaining a pristine deposition environment.
- Intuitive Interface: The CTF Pro controller with a 7-inch TFT touch screen provides user-friendly program setting, data analysis, and remote control capabilities, streamlining operation and data management.
Advantages
- RF plasma automatic matching source, wide 5-500W output power range stable output
- Furnace chamber sliding system for high speed heating and short time cooling, auxiliary fast cooling and automatic sliding movement are available
- PID programmable temperature control, excellent control accuracy and support remote control and centralized control
- High accuracy MFC mass flowmeter control, source gases premixing and stable gas supply speed
- Stainless steel vacuum flange with various adapting port to meet different vacuum pump station setup, good sealing and high vacuum degree
- CTF Pro applies one 7 inches TFT touch screen controller, more friendly program setting and history data analysis
- Low maintenance;Easy to install;Rigid design;Top performance;Longer working life.
Safety Advantage
- Kindle Tech tube furnace owns over current protection and over temperature alarming function, furnace will turn off the power automatically
- Furnace build in thermal couple detecting function, furnace will stop heating and alarm will be on once broken or failure detected
- PE Pro support power failure restarting function,furnace will resume the furnace heating program when power is incoming after failure
Technical specifications
| Furnace model | PE-1600-60 |
|---|---|
| Max. temperature | 1600℃ |
| Constant work temperature | 1550℃ |
| Furnace tube material | High purity Al2O3 tube |
| Furnace tube diameter | 60mm |
| Heating zone length | 2x300mm |
| Chamber material | Japan alumina fiber |
| Heating element | Molybdenum Disilicide |
| Heating rate | 0-10℃/min |
| Thermal couple | B type |
| Temperature controller | Digital PID controller/Touch screen PID controller |
| Temperature control accuracy | ±1℃ |
| RF Plasma unit | |
| Output Power | 5 -500W adjustable with ± 1% stability |
| RF frequency | 13.56 MHz ±0.005% stability |
| Reflection Power | 350W max. |
| Matching | Automatic |
| Noise | <50 dB |
| Cooling | Air cooling. |
| Gas precise control unit | |
| Flow meter | MFC mass flow meter |
| Gas channels | 4 channels |
| Flow rate | MFC1: 0-5SCCM O2 MFC2: 0-20SCMCH4 MFC3: 0- 100SCCM H2 MFC4: 0-500 SCCM N2 |
| Linearity | ±0.5% F.S. |
| Repeatability | ±0.2% F.S. |
| Pipe line and valve | Stainless steel |
| Maximum Operating Pressure | 0.45MPa |
| Flow meter controller | Digital Knob controller/Touch screen controller |
| Standard vacuum unit(Optional) | |
| Vacuum pump | Rotary vane vacuum pump |
| Pump flow rate | 4L/S |
| Vacuum suction port | KF25 |
| Vacuum gauge | Pirani/Resistance silicon vacuum gauge |
| Rated vacuum pressure | 10Pa |
| High vacuum unit(Optional) | |
| Vacuum pump | Rotary vane pump+Molecular pump |
| Pump flow rate | 4L/S+110L/S |
| Vacuum suction port | KF25 |
| Vacuum gauge | Compound vacuum gauge |
| Rated vacuum pressure | 6x10-5Pa |
| Above specifications and setups can be customized | |
Standard Package
| No. | Description | Quantity |
|---|---|---|
| 1 | Furnace | 1 |
| 2 | Quartz tube | 1 |
| 3 | Vacuum flange | 2 |
| 4 | Tube thermal block | 2 |
| 5 | Tube thermal block hook | 1 |
| 6 | Heat resistant glove | 1 |
| 7 | RF plasma source | 1 |
| 8 | Precise gas control | 1 |
| 9 | Vacuum unit | 1 |
| 10 | Operation manual | 1 |
Optional Setup
- In tube gases detecting and monitoring,like H2, O2 and so on
- Independent furnace temperature monitoring and recording
- RS 485 communication port for PC remote control and data exporting
- Insert gases feeding flow rate control,like mass flowmeter and float flowmeter
- Touch screen temperature controller with versatile operator friendly functions
- High vacuum pump station setups, like vane vacuum pump,molecular pump,diffusion pump
Warnings
Operator safety is the top important issue! Please operate the equipment with cautions. Working with inflammable& explosive or toxic gases is very dangerous, operators must take all necessary precautions before starting the equipment. Working with positive pressure inside the reactors or chambers is dangerous, operator must fellow the safety procedures strictly. Extra caution must also be taken when operating with air-reactive materials, especially under vacuum. A leak can draw air into the apparatus and cause a violent reaction to occur.
Designed for You
KinTek provide deep custom made service and equipment to worldwide customers, our specialized teamwork and rich experienced engineers are capable to undertake the custom tailoring hardware and software equipment requirements, and help our customer to build up the exclusive and personalized equipment and solution!
Would you please drop your ideas to us, our engineers are ready for you now!
FAQ
What Is Physical Vapor Deposition (PVD)?
What Is PECVD Method?
What Is Magnetron Sputtering?
What Is PECVD Used For?
Why Magnetron Sputtering?
What Are The Advantages Of PECVD?
What Are The Materials Used In Thin Film Deposition?
Thin film deposition commonly utilizes metals, oxides, and compounds as materials, each with its unique advantages and disadvantages. Metals are preferred for their durability and ease of deposition but are relatively expensive. Oxides are highly durable, can withstand high temperatures, and can be deposited at low temperatures, but can be brittle and challenging to work with. Compounds offer strength and durability, can be deposited at low temperatures and tailored to exhibit specific properties.
The selection of material for a thin film coating is dependent on the application requirements. Metals are ideal for thermal and electrical conduction, while oxides are effective in offering protection. Compounds can be tailored to suit specific needs. Ultimately, the best material for a particular project will depend on the specific needs of the application.
What Is The Difference Between ALD And PECVD?
What Are The Methods To Achieve Optimal Thin Film Deposition?
To achieve thin films with desirable properties, high-quality sputtering targets and evaporation materials are essential. The quality of these materials can be influenced by various factors, such as purity, grain size, and surface condition.
The purity of sputtering targets or evaporation materials plays a crucial role, as impurities can cause defects in the resulting thin film. Grain size also affects the quality of the thin film, with larger grains leading to poor film properties. Additionally, the surface condition is crucial, since rough surfaces can result in defects in the film.
To attain the highest quality sputtering targets and evaporation materials, it is crucial to select materials that possess high purity, small grain size, and smooth surfaces.
Uses Of Thin Film Deposition
Zinc Oxide-Based Thin Films
ZnO thin films find applications in several industries such as thermal, optical, magnetic, and electrical, but their primary use is in coatings and semiconductor devices.
Thin-Film Resistors
Thin-film resistors are crucial for modern technology and are used in radio receivers, circuit boards, computers, radiofrequency devices, monitors, wireless routers, Bluetooth modules, and cell phone receivers.
Magnetic Thin Films
Magnetic thin films are used in electronics, data storage, radio-frequency identification, microwave devices, displays, circuit boards, and optoelectronics as key components.
Optical Thin Films
Optical coatings and optoelectronics are standard applications of optical thin films. Molecular beam epitaxy can produce optoelectronic thin-film devices (semiconductors), where epitaxial films are deposited one atom at a time onto the substrate.
Polymer Thin Films
Polymer thin films are used in memory chips, solar cells, and electronic devices. Chemical deposition techniques (CVD) offer precise control of polymer film coatings, including conformance and coating thickness.
Thin-Film Batteries
Thin-film batteries power electronic devices such as implantable medical devices, and the lithium-ion battery has advanced significantly thanks to the use of thin films.
Thin-Film Coatings
Thin-film coatings enhance the chemical and mechanical characteristics of target materials in various industries and technological fields. Anti-reflective coatings, anti-ultraviolet or anti-infrared coatings, anti-scratch coatings, and lens polarization are some common examples.
Thin-Film Solar Cells
Thin-film solar cells are essential to the solar energy industry, enabling the production of relatively cheap and clean electricity. Photovoltaic systems and thermal energy are the two main applicable technologies.
What Is The Difference Between PECVD And Sputtering?
Factors And Parameters That Influence Deposition Of Thin Films
Deposition Rate:
The rate at which the film is produced, typically measured in thickness divided by time, is crucial for selecting a technology suitable for the application. Moderate deposition rates are sufficient for thin films, while quick deposition rates are necessary for thick films. It is important to strike a balance between speed and precise film thickness control.
Uniformity:
The consistency of the film across the substrate is known as uniformity, which usually refers to film thickness but can also relate to other properties such as the index of refraction. It is important to have a good understanding of the application to avoid under- or over-specifying uniformity.
Fill Capability:
Fill capability or step coverage refers to how well the deposition process covers the substrate's topography. The deposition method used (e.g., CVD, PVD, IBD, or ALD) has a significant impact on step coverage and fill.
Film Characteristics:
The characteristics of the film depend on the application's requirements, which can be categorized as photonic, optical, electronic, mechanical, or chemical. Most films must meet requirements in more than one category.
Process Temperature:
Film characteristics are significantly affected by process temperature, which may be limited by the application.
Damage:
Each deposition technology has the potential to damage the material being deposited upon, with smaller features being more susceptible to process damage. Pollution, UV radiation, and ion bombardment are among the potential sources of damage. It is crucial to understand the limitations of the materials and tools.
4.8
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I'm amazed by how well this PECVD machine works. It truly lives up to its promises.
4.7
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The rotary design allows for uniform heating and mixing of materials, leading to consistent results.
4.9
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The plasma generator boosts reaction efficiency and reduces processing temperatures, making it an efficient choice.
4.6
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The variable-diameter furnace tube design ensures proper mixing and optimal heating effects.
4.8
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The three-way mass flow meter and gas mixing device offer precise control over the process atmosphere.
4.7
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The high-performance mechanical pump facilitates rapid evacuation of the furnace tube, speeding up the process.
4.9
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The continuous coating and modification of powder materials using the CVD method is a game-changer.
4.6
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The user-friendly interface and remote control capabilities make operation a breeze.
4.8
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The safety features, like over current protection and temperature alarming, ensure peace of mind during operation.
4.7
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The automatic matching RF plasma source simplifies setup and ensures stable output power.
4.9
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The furnace chamber's sliding system enables fast heating and cooling, enhancing productivity.
4.6
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The high-accuracy MFC mass flowmeter ensures precise control of source gases, leading to consistent results.
4.8
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The stainless steel vacuum flange with adaptable ports allows for easy integration with different vacuum pump stations.
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