CVD & PECVD Furnace
Split chamber CVD tube furnace with vacuum station CVD machine
Item Number : KT-CTF12
Price varies based on specs and customizations
- Max. temperature
- 1200 ℃
- Constant work temperature
- 1100 ℃
- Furnace tube diameter
- 60 mm
- Heating zone length
- 1x450 mm
- Heating rate
- 0-20 ℃/min
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Introduction
The Split Chamber CVD Tube Furnace With Vacuum Station is a versatile and high-performance laboratory equipment designed for chemical vapor deposition (CVD) applications. It features a split furnace chamber that allows for easy access to reaction samples and rapid cooling. The furnace tube is made of high-temperature quartz and has a diameter of 60 mm. The system includes a 4-channel MFC mass flow meter with source gases of CH4, H2, O2, and N2, providing precise control over gas flow rates. The vacuum station features a 4L/S rotary vane vacuum pump, achieving a maximum vacuum pressure of 10 Pa. With its advanced features and capabilities, the Split Chamber CVD Tube Furnace With Vacuum Station is an ideal choice for various research and development applications in materials science, semiconductor processing, and other fields.
Detail&Parts
Applications
The Split Chamber CVD Tube Furnace With Vacuum Station CVD Machine is a versatile and advanced piece of equipment designed for a variety of applications in the fields of material science, semiconductor manufacturing, and research and development. This machine is particularly useful for processes that require precise control over temperature, gas flow, and vacuum levels, making it an essential tool for high-quality material synthesis and processing.
- Nanomaterial Synthesis: The furnace is ideal for the growth of nanowires, nanofilms, and other nanostructured materials, which are crucial in the development of advanced electronic and optoelectronic devices.
- Vacuum Coating: It is extensively used for the deposition of thin films on various substrates, including metal films, ceramic films, and composite films, which are essential for enhancing the properties of materials in applications such as optics and electronics.
- Battery Material Processing: The furnace is suitable for the drying and sintering of battery materials, which is a critical step in the production of high-performance batteries.
- Material Drying and Sintering: It is used in the high-temperature sintering of ceramics, refractory materials, and specialty materials, ensuring the consolidation and densification of these materials.
- Atmosphere and Vacuum Heat Treatment: The vertical tube furnace configuration allows for quenching, annealing, and tempering of small steel parts, as well as vertical CVD coating, making it a valuable asset in metallurgical processes.
- Research and Development: It is widely used in universities, research institutes, and industrial and mining enterprises for conducting high-temperature experiments, atmosphere sintering, reducing atmosphere, and CVD/CVI experiments, contributing to the advancement of material science and technology.
Features
The Split Chamber CVD Tube Furnace With Vacuum Station CVD Machine is a sophisticated piece of equipment designed for advanced chemical vapor deposition (CVD) processes. This furnace integrates cutting-edge technology to enhance the efficiency and quality of film deposition, making it ideal for research and industrial applications. Here are the key features and their benefits:
- High Film Deposition Rate: Utilizing radio frequency glow technology, this furnace significantly boosts the film deposition rate, reaching up to 10Å/S. This rapid deposition is crucial for high-throughput production and research, saving time and increasing productivity.
- Large Area Uniformity: With advanced multi-point RF feed technology and specialized gas path distribution, the furnace ensures film uniformity of up to 8%. This uniformity is essential for creating consistent and high-quality coatings across large substrates, enhancing the reliability of the materials produced.
- Consistent Deposition: The design incorporates advanced semiconductor industry concepts, resulting in a deviation of less than 2% between substrates. This high level of consistency is vital for applications requiring precise and repeatable results, such as in the production of electronic components.
- Stable Process Control: The equipment's high stability ensures the continuity and consistency of the CVD process. This reliability is critical for maintaining process integrity and reducing the risk of defects or failures during operation.
- Intelligent Control System: Patented by Bonage, the integrated control system includes a high-performance temperature control system that uses a closed-loop negative feedback mechanism. This system, combined with high-quality imported electrical components, enhances the overall performance and reliability of the equipment, making it virtually maintenance-free.
- Versatile Applications: Suitable for depositing various types of films, including metal, ceramic, and composite films, the furnace supports continuous growth processes and can be easily expanded with additional functions like plasma cleaning and etching. This versatility makes it a valuable asset for diverse research and production needs.
Principle
The Split Chamber CVD Tube Furnace With Vacuum Station CVD Machine is a high-temperature vacuum furnace used for chemical vapor deposition (CVD) processes. CVD is a process in which a thin film of material is deposited on a substrate by the chemical reaction of a gas or vapor. The Split Chamber CVD Tube Furnace With Vacuum Station CVD Machine uses a split furnace chamber to allow for easy access to the substrate during the CVD process. The vacuum station is used to create a vacuum in the furnace chamber, which helps to remove impurities and improve the quality of the deposited film.
Advantages
- Intuitive sample observation and rapid cooling: Split furnace chamber allows for direct observation of reaction samples and quick cooling.
- High temperature capability: Max working temperature of up to 1200℃ for versatile applications.
- Precise gas control: 4-channel MFC mass flow meter with CH4, H2, O2, and N2 sources ensures accurate and stable gas supply.
- Vacuum compatibility: Vacuum station with a 4L/S rotary vane vacuum pump achieves a maximum vacuum pressure of up to 10Pa, enabling various vacuum processes.
- High-speed heating and cooling: Furnace chamber sliding system facilitates rapid heating and cooling for efficient sample processing.
- Advanced temperature control: PID programmable temperature control with excellent accuracy, remote control, and centralized control capabilities.
- User-friendly interface: CTF Pro controller with a 7-inch TFT touch screen offers intuitive program setting and data analysis.
- Versatile vacuum setup: Stainless steel vacuum flange with adaptable ports accommodates different vacuum pump stations for customized vacuum environments.
- Energy efficiency: Water cooling system and gas afterflow design minimize energy consumption.
- Wide applicability: Suitable for CVD, diffusion, and other thermo-treatments under vacuum and atmosphere protection.
Safety Advantage
- Kindle Tech tube furnace owns over current protection and over temperature alarming function, furnace will turn off the power automatically
- Furnace build in thermal couple detecting function, furnace will stop heating and alarm will be on once broken or failure detected
- KT-CTF12 Pro support power failure restarting function,furnace will resume the furnace heating program when power is incoming after failure
Technical specifications
| Furnace model | KT-CTF12-60 |
|---|---|
| Max. temperature | 1200℃ |
| Constant work temperature | 1100℃ |
| Furnace tube material | High purity quartz |
| Furnace tube diameter | 60mm |
| Heating zone length | 1x450mm |
| Chamber material | Japan alumina fiber |
| Heating element | Cr2Al2Mo2 wire coil |
| Heating rate | 0-20℃/min |
| Thermal couple | Build in K type |
| Temperature controller | Digital PID controller/Touch screen PID controller |
| Temperature control accuracy | ±1℃ |
| Sliding distance | 600mm |
| Gas precise control unit | |
| Flow meter | MFC mass flow meter |
| Gas channels | 4 channels |
| Flow rate | MFC1: 0-5SCCM O2 MFC2: 0-20SCMCH4 MFC3: 0- 100SCCM H2 MFC4: 0-500 SCCM N2 |
| Linearity | ±0.5% F.S. |
| Repeatability | ±0.2% F.S. |
| Pipe line and valve | Stainless steel |
| Maximum Operating Pressure | 0.45MPa |
| Flow meter controller | Digital Knob controller/Touch screen controller |
| Standard vacuum unit (Optional) | |
| Vacuum pump | Rotary vane vacuum pump |
| Pump flow rate | 4L/S |
| Vacuum suction port | KF25 |
| Vacuum gauge | Pirani/Resistance silicon vacuum gauge |
| Rated vacuum pressure | 10Pa |
| High vacuum unit(Optional) | |
| Vacuum pump | Rotary vane pump+Molecular pump |
| Pump flow rate | 4L/S+110L/S |
| Vacuum suction port | KF25 |
| Vacuum gauge | Compound vacuum gauge |
| Rated vacuum pressure | 6x10-5Pa |
| Above specifications and setups can be customized | |
Standard Package
| No. | Description | Quantity |
|---|---|---|
| 1 | Furnace | 1 |
| 2 | Quartz tube | 1 |
| 3 | Vacuum flange | 2 |
| 4 | Tube thermal block | 2 |
| 5 | Tube thermal block hook | 1 |
| 6 | Heat resistant glove | 1 |
| 7 | Precise gas control | 1 |
| 8 | Vacuum unit | 1 |
| 9 | Operation manual | 1 |
Optional Setup
- In tube gases detecting and monitoring,like H2, O2 and so on
- Independent furnace temperature monitoring and recording
- RS 485 communication port for PC remote control and data exporting
- Insert gases feeding flow rate control,like mass flowmeter and float flowmeter
- Touch screen temperature controller with versatile operator friendly functions
- High vacuum pump station setups, like vane vacuum pump,molecular pump,diffusion pump
Warnings
Operator safety is the top important issue! Please operate the equipment with cautions. Working with inflammable& explosive or toxic gases is very dangerous, operators must take all necessary precautions before starting the equipment. Working with positive pressure inside the reactors or chambers is dangerous, operator must fellow the safety procedures strictly. Extra caution must also be taken when operating with air-reactive materials, especially under vacuum. A leak can draw air into the apparatus and cause a violent reaction to occur.
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FAQ
What is CVD furnace?
Chemical vapor deposition (CVD) is a technology that uses various energy sources such as heating, plasma excitation or light radiation to chemically react gaseous or vapor chemical substances on the gas phase or gas-solid interface to form solid deposits in the reactor by means of chemical reaction.To put it simply, two or more gaseous raw materials are introduced into a reaction chamber, and then they react with each other to form a new material and deposit it on the substrate surface.
CVD furnace is one combined furnace system with high temperature tube furnace unit,gases control unit, and vacuum unit, it is widely used for experiment and production of composite material preparation, microelectronics process, semiconductor optoelectronic, solar energy utilization, optical fiber communication, superconductor technology, protective coating field.
What is a lab press?
How does CVD furnace work?
CVD furnace system consists of high temperature tube furnace unit, reacting gas source precise control unit, vacuum pump station and corresponding assembling parts.
Vacuum pump is to remove the air from the reacting tube,and make sure there is no unwanted gases inside the reaction tube, after that the tube furnace will heat the reaction tube to a target temperature, then reacting gas source precise control unit can introduce different gases with a set ratio into the furnace tube for the chemical reaction, the chemical vapor deposition will be formed in the CVD furnace.
What is PECVD method?
What is the basic principle of CVD?
What is Mpcvd?
How does PACVD work?
What is RF PECVD?
What are the methods used to deposit thin films?
What is the purpose of a hydraulic press in lab?
Which gas is used in CVD process?
There are tremendous gas sources can be used in the CVD process, the common chemical reactions of CVD includes Pyrolysis, photolysis, reduction, oxidation, redox,so the gases involved in these chemical reactions can be used in the CVD process.
We take CVD Graphene growth for an example, the gases used in the CVD process will be CH4,H2,O2 and N2.
What is PECVD used for?
What are the different types of CVD method?
What is Mpcvd machine?
PACVD is PECVD?
How does RF PECVD work?
What is thin film deposition equipment?
What are different type of lab presses?
What is the advantage of CVD system?
- Wide range of films can be produced, metal film, nonmetal film and multi-component alloy film as required. At the same time, it can prepare high-quality crystals that are difficult to obtain by other methods, such as GaN, BP, etc.
- The film forming speed is fast, usually several microns per minute or even hundreds of microns per minute. It is possible to simultaneously deposit large quantities of coatings with uniform composition, which is incomparable to other film preparation methods, such as liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE).
- The working conditions are carried out under normal pressure or low vacuum conditions, so the coating has good diffraction, and the workpieces with complex shapes can be uniformly coated, which is much superior to PVD.
- Due to the mutual diffusion of reaction gas, reaction product and substrate, a coating with good adhesion strength can be obtained, which is crucial for preparing surface strengthened films such as wear-resistant and anti-corrosion films.
- Some films grow at a temperature far lower than the melting point of the film material. Under the condition of low temperature growth, the reaction gas and reactor wall and impurities contained in them almost do not react, so a film with high purity and good crystallinity can be obtained.
- Chemical vapor deposition can obtain a smooth deposition surface. This is because compared with LPE, chemical vapor deposition (CVD) is carried out under high saturation, with high nucleation rate, high nucleation density, and uniform distribution on the whole plane, resulting in a macroscopic smooth surface. At the same time, in chemical vapor deposition, the average free path of molecules (atoms) is much larger than LPE, so the spatial distribution of molecules is more uniform, which is conducive to the formation of a smooth deposition surface.
- Low radiation damage, which is a necessary condition for manufacturing metal oxide semiconductors (MOS) and other devices
What are the advantages of PECVD?
What are the advantages of using chemical vapor deposition machines?
What are the advantages of Mpcvd?
What are the advantages of using PACVD?
What are the advantages of RF PECVD?
What is thin-film deposition technology?
What does PECVD stand for?
PECVD is a technology that uses plasma to activate reaction gas, promote chemical reaction on the surface of substrate or near surface space, and generate solid film. The basic principle of plasma chemical vapor deposition technology is that under the action of RF or DC electric field, the source gas is ionized to form a plasma, the low-temperature plasma is used as the energy source, an appropriate amount of reaction gas is introduced, and the plasma discharge is used to activate the reaction gas and realize chemical vapor deposition.
According to the method of generating plasma, it can be divided into RF plasma, DC plasma and microwave plasma CVD, etc...
What is the difference between ALD and PECVD?
What are the applications of chemical vapor deposition machines?
Are CVD diamonds real or fake?
What are the common applications of PACVD?
What are the advantages of using thin film deposition equipment?
What is the difference between CVD and PECVD?
The difference between PECVD and traditional CVD technology is that the plasma contains a large number of high-energy electrons, which can provide the activation energy required in the chemical vapor deposition process, thus changing the energy supply mode of the reaction system. Since the electron temperature in the plasma is as high as 10000K, the collision between electrons and gas molecules can promote the chemical bond breaking and recombination of the reaction gas molecules to generate more active chemical groups, while the whole reaction system maintains a lower temperature.
So compared to the CVD process, PECVD can carry out the same chemical vapor deposition process with a lower temperature.
What is the difference between PECVD and sputtering?
What factors should be considered when selecting a chemical vapor deposition machine?
What factors should be considered when selecting a PACVD system?
What factors should be considered when selecting thin film deposition equipment?
Can chemical vapor deposition machines be used for multi-layered thin film deposition?
What safety considerations are associated with operating thin film deposition equipment?
4.8
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5
I'm impressed with the speed of delivery. I received my order within a week of placing it.
4.9
out of
5
This product is worth every penny. The build quality is top-notch, and it performs even better than advertised.
4.7
out of
5
I'm amazed by the technological advancement of this product. It's like having a mini-lab in my own laboratory.
4.8
out of
5
The split chamber design is a game-changer. It makes it so easy to load and unload samples.
4.9
out of
5
The vacuum station is a great addition. It allows me to create a controlled environment for my experiments.
4.7
out of
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I'm very satisfied with the durability of this product. It's been through a lot of use, and it's still going strong.
4.8
out of
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The customer service from KINTEK SOLUTION is exceptional. They're always quick to respond to my inquiries and help me troubleshoot any issues.
4.9
out of
5
I highly recommend this product to any laboratory manager looking for a reliable and high-quality CVD tube furnace.
4.7
out of
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This product has exceeded my expectations. It's easy to use and maintain, and it produces excellent results.
4.8
out of
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I'm very happy with my purchase. This product is a great addition to my laboratory.
4.9
out of
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I'm impressed with the quality of this product. It's well-made and performs flawlessly.
4.7
out of
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This product is a must-have for any laboratory. It's a versatile and powerful tool that can be used for a variety of applications.
4.8
out of
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I'm very satisfied with this product. It's a great value for the price.
4.9
out of
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I highly recommend this product to any laboratory manager looking for a reliable and affordable CVD tube furnace.
4.7
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This product is a great addition to my laboratory. It's easy to use and produces excellent results.
4.8
out of
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I'm very happy with my purchase. This product is a great value for the price.
4.9
out of
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I highly recommend this product to any laboratory manager looking for a reliable and affordable CVD tube furnace.
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