Products Thermal Equipment CVD & PECVD Furnace Slide PECVD tube furnace with liquid gasifier PECVD machine
Slide PECVD tube furnace with liquid gasifier PECVD machine

CVD & PECVD Furnace

Slide PECVD tube furnace with liquid gasifier PECVD machine

Item Number : KT-PE12

Price varies based on specs and customizations


Max. temperature
1200 ℃
Constant work temperature
1100 ℃
Furnace tube diameter
60 mm
Heating zone length
1x450 mm
Heating rate
0-20 ℃/min
Sliding distance
600mm
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Introduction

The Slide PECVD Tube Furnace With Liquid Gasifier PECVD Machine is a versatile and high-performance system designed for a wide range of thin film deposition applications. It features a 500W RF plasma source, slide-out furnace, precise gas flow control, and a vacuum station. The system offers advantages such as automatic plasma matching, high-speed heating and cooling, programmable temperature control, and a user-friendly interface. It is widely used in research and production environments for depositing thin films in various industries, including electronics, semiconductors, and optics.

Applications

Slide PECVD Tube Furnace With Liquid Gasifier PECVD Machine finds its applications in:

  • Chemical Vapor Deposition (CVD)
  • Plasma Enhanced Chemical Vapor Deposition (PECVD)
  • Thin film deposition
  • Solar cell fabrication
  • Semiconductor processing
  • Nanotechnology
  • Materials science
  • Research and development

Different temperature and setup CVD systems available

Slide PECVD system with liquid gasifier(1.Vacuum sensor 2.RF Plasma 3.Furnace 4.Relief valve 5.Flapper valve 6.Heat belt 7.Flowmeter 8.Liquid gasifier 9.Gas station 10.Cabinet)
Slide PECVD system with liquid gasifier(1.Vacuum sensor 2.RF Plasma 3.Furnace 4.Relief valve 5.Flapper valve 6.Heat belt 7.Flowmeter 8.Liquid gasifier 9.Gas station 10.Cabinet)
Slide PECVD system with dual split tube furnace
Slide PECVD system with dual split tube furnace
Split PECVD system with large diameter tube
Split PECVD system with large diameter tube
4 channels MFC PECVD system with high vacuum station
4 channels MFC PECVD system with high vacuum station

Principle

The Slide PECVD Tube Furnace With Liquid Gasifier PECVD Machine employs low-temperature plasma to generate a glow discharge in the process chamber's cathode (sample tray). The glow discharge (or another heat source) raises the sample's temperature to a predetermined level. Then, controlled amounts of process gas are introduced, undergoing chemical and plasma reactions to form a solid film on the sample's surface.

Features

The Slide PECVD Tube Furnace With Liquid Gasifier PECVD Machine offers numerous benefits to users:

  • Enhanced power generation for solar cell wafers: The innovative graphite boat structure significantly improves the power output of solar cells.
  • Elimination of color difference in tubular PECVD cells: This equipment effectively addresses the issue of color variation in tubular PECVD cells.
  • Wide output power range (5-500W): The RF plasma automatic matching source provides a versatile range of output power, ensuring optimal performance for various applications.
  • High-speed heating and cooling: The furnace chamber sliding system enables rapid heating and cooling, reducing processing time. Auxiliary forced air circulation further accelerates the cooling rate.
  • Automated sliding movement: The optional sliding movement feature allows for automatic operation, enhancing efficiency and reducing manual intervention.
  • Precise temperature control: PID programmable temperature control ensures accurate temperature regulation, supporting remote and centralized control for added convenience.
  • High-accuracy MFC mass flowmeter control: The MFC mass flowmeter precisely controls source gases, ensuring a stable and consistent gas supply.
  • Versatile vacuum station: The stainless steel vacuum flange with multiple adapting ports accommodates various vacuum pump station configurations, ensuring a high vacuum degree.
  • User-friendly interface: The CTF Pro 7-inch TFT touch screen controller simplifies program setting and allows for easy analysis of historical data.

Advantages

  • RF plasma automatic matching source, wide 5-500W output power range stable output
  • Furnace chamber sliding system for high speed heating and short time cooling, auxiliary fast cooling and automatic sliding movement are available
  • PID programmable temperature control,excellent control accuracy and support remote control and centralized control 
  • High accuracy MFC mass flowmeter control, source gases premixing and stable gas supply speed
  • Stainless steel vacuum flange with various adapting port to meet different vacuum pump station setup, good sealing and high vacuum degree
  • CTF Pro applies one 7 inches TFT touch screen controller, more friendly program setting and history data analysis

Safety Advantage

  • Kindle Tech tube furnace owns over current protection and over temperature alarming function, furnace will turn off the power automatically
  • Furnace build in thermal couple detecting function, furnace will stop heating and alarm will be on once broken or failure detected
  • PE Pro support power failure restarting function,furnace will resume the furnace heating program when power is incoming after failure

Technical specifications

Furnace model KT-PE12-60
Max. temperature 1200℃
Constant work temperature 1100℃
Furnace tube material High purity quartz
Furnace tube diameter 60mm
Heating zone length 1x450mm
Chamber material Japan alumina fiber
Heating element Cr2Al2Mo2 wire coil
Heating rate 0-20℃/min
Thermal couple Build in K type
Temperature controller Digital PID controller/Touch screen PID controller
Temperature control accuracy ±1℃
Sliding distance 600mm
RF Plasma unit
Output Power  5 -500W adjustable with ± 1% stability
RF frequency 13.56 MHz ±0.005% stability
Reflection Power 350W max.
Matching Automatic
Noise <50 dB
Cooling Air cooling.
Gas precise control unit
Flow meter MFC mass flow meter
Gas channels 4 channels
Flow rate MFC1: 0-5SCCM O2
MFC2: 0-20SCMCH4
MFC3: 0- 100SCCM H2
MFC4: 0-500 SCCM N2
Linearity ±0.5% F.S.
Repeatability ±0.2% F.S.
 Pipe line and valve Stainless steel
Maximum Operating Pressure 0.45MPa
Flow meter controller Digital Knob controller/Touch screen controller
Standard vacuum unit(Optional)
Vacuum pump Rotary vane vacuum pump
Pump flow rate 4L/S
Vacuum suction port KF25
Vacuum gauge Pirani/Resistance silicon vacuum gauge
Rated vacuum pressure 10Pa
High vacuum unit(Optional)
Vacuum pump Rotary vane pump+Molecular pump
Pump flow rate 4L/S+110L/S
Vacuum suction port KF25
Vacuum gauge Compound vacuum gauge
Rated vacuum pressure 6x10-5Pa
Above specifications and setups can be customized

Standard Package

No. Description Quantity
1 Furnace 1
2 Quartz tube 1
3 Vacuum flange 2
4 Tube thermal block 2
5 Tube thermal block hook 1
6 Heat resistant glove 1
7 RF plasma source 1
8 Precise gas control 1
9 Vacuum unit 1
10 Operation manual 1

Optional Setup

  • In tube gases detecting and monitoring,like H2, O2 and so on
  • Independent furnace temperature monitoring and recording
  • RS 485 communication port for PC remote control and data exporting
  • Insert gases feeding flow rate control,like mass flowmeter and float flowmeter
  • Touch screen temperature controller with versatile operator friendly functions
  • High vacuum pump station setups, like vane vacuum pump,molecular pump,diffusion pump

Warnings

Operator safety is the top important issue! Please operate the equipment with cautions. Working with inflammable& explosive or toxic gases is very dangerous, operators must take all necessary precautions before starting the equipment. Working with positive pressure inside the reactors or chambers is dangerous, operator must fellow the safety procedures strictly. Extra caution must also be taken when operating with air-reactive materials, especially under vacuum. A leak can draw air into the apparatus and cause a violent reaction to occur.

Designed for You

KinTek provide deep custom made service and equipment to worldwide customers, our specialized teamwork and rich experienced engineers are capable to undertake the custom tailoring hardware and software equipment requirements, and help our customer to build up the exclusive and personalized equipment and solution!

Would you please drop your ideas to us, our engineers are ready for you now!

FAQ

What Is Physical Vapor Deposition (PVD)?

Physical vapor deposition (PVD) is a technique for depositing thin films by vaporizing a solid material in a vacuum and then depositing it onto a substrate. PVD coatings are highly durable, scratch-resistant, and corrosion-resistant, making them ideal for a variety of applications, from solar cells to semiconductors. PVD also creates thin films that can withstand high temperatures. However, PVD can be costly, and the cost varies depending on the method used. For instance, evaporation is a low-cost PVD method, while ion beam sputtering is rather expensive. Magnetron sputtering, on the other hand, is more expensive but more scalable.

What Is PECVD Method?

PECVD (Plasma Enhanced Chemical Vapor Deposition) is a process used in semiconductor manufacturing to deposit thin films on microelectronic devices, photovoltaic cells, and display panels. In PECVD, a precursor is introduced to the reaction chamber in a gaseous state, and the assistance of plasma reactive media dissociates the precursor at much lower temperatures than with CVD. PECVD systems offer excellent film uniformity, low-temperature processing, and high throughput. They are used in a wide range of applications and will play an increasingly important role in the semiconductor industry as the demand for advanced electronic devices continues to grow.

What Is Magnetron Sputtering?

Magnetron sputtering is a plasma-based coating technique used to produce very dense films with excellent adhesion, making it a versatile method for creating coatings on materials that have high melting points and cannot be evaporated. This method generates a magnetically confined plasma near the surface of a target, where positively charged energetic ions collide with the negatively charged target material, causing atoms to be ejected or "sputtered." These ejected atoms are then deposited on a substrate or wafer to create the desired coating.

What Is PECVD Used For?

PECVD (Plasma Enhanced Chemical Vapor Deposition) is widely used in the semiconductor industry to fabricate integrated circuits, as well as in the photovoltaic, tribological, optical, and biomedical fields. It is used to deposit thin films for microelectronic devices, photovoltaic cells, and display panels. PECVD can produce unique compounds and films that cannot be created by common CVD techniques alone, and films that demonstrate high solvent and corrosion resistance with chemical and thermal stability. It is also used to produce homogenous organic and inorganic polymers over large surfaces, and Diamond-like Carbon (DLC) for tribological applications.

Why Magnetron Sputtering?

Magnetron sputtering is preferred due to its ability to achieve high precision in film thickness and density of coatings, surpassing evaporation methods. This technique is especially suitable for creating metallic or insulating coatings with specific optical or electrical properties. Additionally, magnetron sputtering systems can be configured with multiple magnetron sources.

What Are The Advantages Of PECVD?

The primary advantages of PECVD are its ability to operate at lower deposition temperatures, providing better conformity and step coverage on uneven surfaces, tighter control of the thin film process, and high deposition rates. PECVD allows for successful applications in situations where conventional CVD temperatures could potentially damage the device or substrate being coated. By operating at a lower temperature, PECVD creates less stress between thin film layers, allowing for high-efficiency electrical performance and bonding to very high standards.

What Are The Materials Used In Thin Film Deposition?

Thin film deposition commonly utilizes metals, oxides, and compounds as materials, each with its unique advantages and disadvantages. Metals are preferred for their durability and ease of deposition but are relatively expensive. Oxides are highly durable, can withstand high temperatures, and can be deposited at low temperatures, but can be brittle and challenging to work with. Compounds offer strength and durability, can be deposited at low temperatures and tailored to exhibit specific properties.

The selection of material for a thin film coating is dependent on the application requirements. Metals are ideal for thermal and electrical conduction, while oxides are effective in offering protection. Compounds can be tailored to suit specific needs. Ultimately, the best material for a particular project will depend on the specific needs of the application.

What Is The Difference Between ALD And PECVD?

ALD is a thin film deposition process that allows for atomic layer thickness resolution, excellent uniformity of high aspect ratio surfaces and pinhole-free layers. This is achieved by the continuous formation of atomic layers in a self-limiting reaction. PECVD, on the other hand, involves mixing the source material with one or more volatile precursors using a plasma to chemically interact and breakdown the source material. The processes use heat with higher pressures leading to a more reproducible film where the film thicknesses could be managed by time/power. These films are more stoichiometric, denser and are capable of growing higher quality insulator films.

What Are The Methods To Achieve Optimal Thin Film Deposition?

To achieve thin films with desirable properties, high-quality sputtering targets and evaporation materials are essential. The quality of these materials can be influenced by various factors, such as purity, grain size, and surface condition.

The purity of sputtering targets or evaporation materials plays a crucial role, as impurities can cause defects in the resulting thin film. Grain size also affects the quality of the thin film, with larger grains leading to poor film properties. Additionally, the surface condition is crucial, since rough surfaces can result in defects in the film.

To attain the highest quality sputtering targets and evaporation materials, it is crucial to select materials that possess high purity, small grain size, and smooth surfaces.

Uses Of Thin Film Deposition

Zinc Oxide-Based Thin Films

ZnO thin films find applications in several industries such as thermal, optical, magnetic, and electrical, but their primary use is in coatings and semiconductor devices.

Thin-Film Resistors

Thin-film resistors are crucial for modern technology and are used in radio receivers, circuit boards, computers, radiofrequency devices, monitors, wireless routers, Bluetooth modules, and cell phone receivers.

Magnetic Thin Films

Magnetic thin films are used in electronics, data storage, radio-frequency identification, microwave devices, displays, circuit boards, and optoelectronics as key components.

Optical Thin Films

Optical coatings and optoelectronics are standard applications of optical thin films. Molecular beam epitaxy can produce optoelectronic thin-film devices (semiconductors), where epitaxial films are deposited one atom at a time onto the substrate.

Polymer Thin Films

Polymer thin films are used in memory chips, solar cells, and electronic devices. Chemical deposition techniques (CVD) offer precise control of polymer film coatings, including conformance and coating thickness.

Thin-Film Batteries

Thin-film batteries power electronic devices such as implantable medical devices, and the lithium-ion battery has advanced significantly thanks to the use of thin films.

Thin-Film Coatings

Thin-film coatings enhance the chemical and mechanical characteristics of target materials in various industries and technological fields. Anti-reflective coatings, anti-ultraviolet or anti-infrared coatings, anti-scratch coatings, and lens polarization are some common examples.

Thin-Film Solar Cells

Thin-film solar cells are essential to the solar energy industry, enabling the production of relatively cheap and clean electricity. Photovoltaic systems and thermal energy are the two main applicable technologies.

What Is The Difference Between PECVD And Sputtering?

PECVD and sputtering are both physical vapor deposition techniques used for thin film deposition. PECVD is a diffusive gas-driven process that yields very high-quality thin films while sputtering is a line-of-sight deposition. PECVD allows for better coverage on uneven surfaces such as trenches, walls, and high conformity and can produce unique compounds and films. On the other hand, sputtering is good for the deposition of fine layers of several materials, ideal for creating multi-layered and multi-graduated coating systems. PECVD is mainly used in the semiconductor industry, tribological, optical, and biomedical fields while sputtering is mostly used for dielectric materials and tribological applications.

Factors And Parameters That Influence Deposition Of Thin Films

Deposition Rate:

The rate at which the film is produced, typically measured in thickness divided by time, is crucial for selecting a technology suitable for the application. Moderate deposition rates are sufficient for thin films, while quick deposition rates are necessary for thick films. It is important to strike a balance between speed and precise film thickness control.

Uniformity:

The consistency of the film across the substrate is known as uniformity, which usually refers to film thickness but can also relate to other properties such as the index of refraction. It is important to have a good understanding of the application to avoid under- or over-specifying uniformity.

Fill Capability:

Fill capability or step coverage refers to how well the deposition process covers the substrate's topography. The deposition method used (e.g., CVD, PVD, IBD, or ALD) has a significant impact on step coverage and fill.

Film Characteristics:

The characteristics of the film depend on the application's requirements, which can be categorized as photonic, optical, electronic, mechanical, or chemical. Most films must meet requirements in more than one category.

Process Temperature:

Film characteristics are significantly affected by process temperature, which may be limited by the application.

Damage:

Each deposition technology has the potential to damage the material being deposited upon, with smaller features being more susceptible to process damage. Pollution, UV radiation, and ion bombardment are among the potential sources of damage. It is crucial to understand the limitations of the materials and tools.

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4.9

out of

5

I'm amazed by the quick delivery and the quality of the product. It's a game-changer for our lab.

Martina Pavan

4.8

out of

5

The Slide PECVD tube furnace has exceeded our expectations. It's a valuable addition to our research facility.

Edwin Delacroix

4.7

out of

5

This PECVD machine is a lifesaver! It has helped us achieve remarkable results in our research.

Rhea Kapoor

4.9

out of

5

The durability of this product is exceptional. It has withstood rigorous use in our lab.

Robert Lewandowski

4.8

out of

5

The technological advancements in this PECVD system have revolutionized our research capabilities.

Isabella Garcia

4.7

out of

5

I highly recommend this product. It's worth every penny and has enhanced our research efficiency.

Jack Miller

4.9

out of

5

The Slide PECVD tube furnace is a fantastic investment. It has accelerated our research progress significantly.

Olivia Jones

4.8

out of

5

This PECVD system is user-friendly and has simplified our research procedures.

Sebastian Meyer

4.7

out of

5

The technical support provided by KINTEK SOLUTION is outstanding. They're always ready to assist us.

Aisha Khan

4.9

out of

5

The Slide PECVD tube furnace has revolutionized our research methodology. It's a must-have for any lab.

Lucas Silva

4.8

out of

5

This PECVD machine is a game-changer. It has enabled us to achieve groundbreaking results in our research.

Mia Rodriguez

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