CVD & PECVD Furnace
Slide PECVD tube furnace with liquid gasifier PECVD machine
Item Number : KT-PE12
Price varies based on specs and customizations
- Max. temperature
- 1200 ℃
- Constant work temperature
- 1100 ℃
- Furnace tube diameter
- 60 mm
- Heating zone length
- 1x450 mm
- Heating rate
- 0-20 ℃/min
- Sliding distance
- 600mm
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Introduction
The Slide PECVD Tube Furnace With Liquid Gasifier PECVD Machine is a versatile and high-performance system designed for a wide range of thin film deposition applications. It features a 500W RF plasma source, slide-out furnace, precise gas flow control, and a vacuum station. The system offers advantages such as automatic plasma matching, high-speed heating and cooling, programmable temperature control, and a user-friendly interface. It is widely used in research and production environments for depositing thin films in various industries, including electronics, semiconductors, and optics.
Applications
Slide PECVD Tube Furnace With Liquid Gasifier PECVD Machine finds its applications in:
- Chemical Vapor Deposition (CVD)
- Plasma Enhanced Chemical Vapor Deposition (PECVD)
- Thin film deposition
- Solar cell fabrication
- Semiconductor processing
- Nanotechnology
- Materials science
- Research and development
Different temperature and setup CVD systems available
Principle
The Slide PECVD Tube Furnace With Liquid Gasifier PECVD Machine employs low-temperature plasma to generate a glow discharge in the process chamber's cathode (sample tray). The glow discharge (or another heat source) raises the sample's temperature to a predetermined level. Then, controlled amounts of process gas are introduced, undergoing chemical and plasma reactions to form a solid film on the sample's surface.
Features
The Slide PECVD Tube Furnace With Liquid Gasifier PECVD Machine offers numerous benefits to users:
- Enhanced power generation for solar cell wafers: The innovative graphite boat structure significantly improves the power output of solar cells.
- Elimination of color difference in tubular PECVD cells: This equipment effectively addresses the issue of color variation in tubular PECVD cells.
- Wide output power range (5-500W): The RF plasma automatic matching source provides a versatile range of output power, ensuring optimal performance for various applications.
- High-speed heating and cooling: The furnace chamber sliding system enables rapid heating and cooling, reducing processing time. Auxiliary forced air circulation further accelerates the cooling rate.
- Automated sliding movement: The optional sliding movement feature allows for automatic operation, enhancing efficiency and reducing manual intervention.
- Precise temperature control: PID programmable temperature control ensures accurate temperature regulation, supporting remote and centralized control for added convenience.
- High-accuracy MFC mass flowmeter control: The MFC mass flowmeter precisely controls source gases, ensuring a stable and consistent gas supply.
- Versatile vacuum station: The stainless steel vacuum flange with multiple adapting ports accommodates various vacuum pump station configurations, ensuring a high vacuum degree.
- User-friendly interface: The CTF Pro 7-inch TFT touch screen controller simplifies program setting and allows for easy analysis of historical data.
Advantages
- RF plasma automatic matching source, wide 5-500W output power range stable output
- Furnace chamber sliding system for high speed heating and short time cooling, auxiliary fast cooling and automatic sliding movement are available
- PID programmable temperature control,excellent control accuracy and support remote control and centralized control
- High accuracy MFC mass flowmeter control, source gases premixing and stable gas supply speed
- Stainless steel vacuum flange with various adapting port to meet different vacuum pump station setup, good sealing and high vacuum degree
- CTF Pro applies one 7 inches TFT touch screen controller, more friendly program setting and history data analysis
Safety Advantage
- Kindle Tech tube furnace owns over current protection and over temperature alarming function, furnace will turn off the power automatically
- Furnace build in thermal couple detecting function, furnace will stop heating and alarm will be on once broken or failure detected
- PE Pro support power failure restarting function,furnace will resume the furnace heating program when power is incoming after failure
Technical specifications
| Furnace model | KT-PE12-60 |
| Max. temperature | 1200℃ |
| Constant work temperature | 1100℃ |
| Furnace tube material | High purity quartz |
| Furnace tube diameter | 60mm |
| Heating zone length | 1x450mm |
| Chamber material | Japan alumina fiber |
| Heating element | Cr2Al2Mo2 wire coil |
| Heating rate | 0-20℃/min |
| Thermal couple | Build in K type |
| Temperature controller | Digital PID controller/Touch screen PID controller |
| Temperature control accuracy | ±1℃ |
| Sliding distance | 600mm |
| RF Plasma unit | |
| Output Power | 5 -500W adjustable with ± 1% stability |
| RF frequency | 13.56 MHz ±0.005% stability |
| Reflection Power | 350W max. |
| Matching | Automatic |
| Noise | <50 dB |
| Cooling | Air cooling. |
| Gas precise control unit | |
| Flow meter | MFC mass flow meter |
| Gas channels | 4 channels |
| Flow rate | MFC1: 0-5SCCM O2 MFC2: 0-20SCMCH4 MFC3: 0- 100SCCM H2 MFC4: 0-500 SCCM N2 |
| Linearity | ±0.5% F.S. |
| Repeatability | ±0.2% F.S. |
| Pipe line and valve | Stainless steel |
| Maximum Operating Pressure | 0.45MPa |
| Flow meter controller | Digital Knob controller/Touch screen controller |
| Standard vacuum unit(Optional) | |
| Vacuum pump | Rotary vane vacuum pump |
| Pump flow rate | 4L/S |
| Vacuum suction port | KF25 |
| Vacuum gauge | Pirani/Resistance silicon vacuum gauge |
| Rated vacuum pressure | 10Pa |
| High vacuum unit(Optional) | |
| Vacuum pump | Rotary vane pump+Molecular pump |
| Pump flow rate | 4L/S+110L/S |
| Vacuum suction port | KF25 |
| Vacuum gauge | Compound vacuum gauge |
| Rated vacuum pressure | 6x10-5Pa |
| Above specifications and setups can be customized | |
Standard Package
| No. | Description | Quantity |
| 1 | Furnace | 1 |
| 2 | Quartz tube | 1 |
| 3 | Vacuum flange | 2 |
| 4 | Tube thermal block | 2 |
| 5 | Tube thermal block hook | 1 |
| 6 | Heat resistant glove | 1 |
| 7 | RF plasma source | 1 |
| 8 | Precise gas control | 1 |
| 9 | Vacuum unit | 1 |
| 10 | Operation manual | 1 |
Optional Setup
- In tube gases detecting and monitoring,like H2, O2 and so on
- Independent furnace temperature monitoring and recording
- RS 485 communication port for PC remote control and data exporting
- Insert gases feeding flow rate control,like mass flowmeter and float flowmeter
- Touch screen temperature controller with versatile operator friendly functions
- High vacuum pump station setups, like vane vacuum pump,molecular pump,diffusion pump
Warnings
Operator safety is the top important issue! Please operate the equipment with cautions. Working with inflammable& explosive or toxic gases is very dangerous, operators must take all necessary precautions before starting the equipment. Working with positive pressure inside the reactors or chambers is dangerous, operator must fellow the safety procedures strictly. Extra caution must also be taken when operating with air-reactive materials, especially under vacuum. A leak can draw air into the apparatus and cause a violent reaction to occur.
Designed for You
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Would you please drop your ideas to us, our engineers are ready for you now!
FAQ
What is CVD furnace?
Chemical vapor deposition (CVD) is a technology that uses various energy sources such as heating, plasma excitation or light radiation to chemically react gaseous or vapor chemical substances on the gas phase or gas-solid interface to form solid deposits in the reactor by means of chemical reaction.To put it simply, two or more gaseous raw materials are introduced into a reaction chamber, and then they react with each other to form a new material and deposit it on the substrate surface.
CVD furnace is one combined furnace system with high temperature tube furnace unit,gases control unit, and vacuum unit, it is widely used for experiment and production of composite material preparation, microelectronics process, semiconductor optoelectronic, solar energy utilization, optical fiber communication, superconductor technology, protective coating field.
What is Physical vapor deposition (PVD)?
What is PECVD method?
How does CVD furnace work?
CVD furnace system consists of high temperature tube furnace unit, reacting gas source precise control unit, vacuum pump station and corresponding assembling parts.
Vacuum pump is to remove the air from the reacting tube,and make sure there is no unwanted gases inside the reaction tube, after that the tube furnace will heat the reaction tube to a target temperature, then reacting gas source precise control unit can introduce different gases with a set ratio into the furnace tube for the chemical reaction, the chemical vapor deposition will be formed in the CVD furnace.
What is RF PECVD?
What are the methods used to deposit thin films?
How does PACVD work?
What is magnetron sputtering?
What is Mpcvd?
What is PECVD used for?
Which gas is used in CVD process?
There are tremendous gas sources can be used in the CVD process, the common chemical reactions of CVD includes Pyrolysis, photolysis, reduction, oxidation, redox,so the gases involved in these chemical reactions can be used in the CVD process.
We take CVD Graphene growth for an example, the gases used in the CVD process will be CH4,H2,O2 and N2.
How does RF PECVD work?
What is thin film deposition equipment?
PACVD is PECVD?
Why magnetron sputtering?
What is Mpcvd machine?
What are the advantages of PECVD?
What is the advantage of CVD system?
- Wide range of films can be produced, metal film, nonmetal film and multi-component alloy film as required. At the same time, it can prepare high-quality crystals that are difficult to obtain by other methods, such as GaN, BP, etc.
- The film forming speed is fast, usually several microns per minute or even hundreds of microns per minute. It is possible to simultaneously deposit large quantities of coatings with uniform composition, which is incomparable to other film preparation methods, such as liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE).
- The working conditions are carried out under normal pressure or low vacuum conditions, so the coating has good diffraction, and the workpieces with complex shapes can be uniformly coated, which is much superior to PVD.
- Due to the mutual diffusion of reaction gas, reaction product and substrate, a coating with good adhesion strength can be obtained, which is crucial for preparing surface strengthened films such as wear-resistant and anti-corrosion films.
- Some films grow at a temperature far lower than the melting point of the film material. Under the condition of low temperature growth, the reaction gas and reactor wall and impurities contained in them almost do not react, so a film with high purity and good crystallinity can be obtained.
- Chemical vapor deposition can obtain a smooth deposition surface. This is because compared with LPE, chemical vapor deposition (CVD) is carried out under high saturation, with high nucleation rate, high nucleation density, and uniform distribution on the whole plane, resulting in a macroscopic smooth surface. At the same time, in chemical vapor deposition, the average free path of molecules (atoms) is much larger than LPE, so the spatial distribution of molecules is more uniform, which is conducive to the formation of a smooth deposition surface.
- Low radiation damage, which is a necessary condition for manufacturing metal oxide semiconductors (MOS) and other devices
What are the advantages of RF PECVD?
What is thin-film deposition technology?
What are the advantages of using PACVD?
What are the materials used in thin film deposition?
Thin film deposition commonly utilizes metals, oxides, and compounds as materials, each with its unique advantages and disadvantages. Metals are preferred for their durability and ease of deposition but are relatively expensive. Oxides are highly durable, can withstand high temperatures, and can be deposited at low temperatures, but can be brittle and challenging to work with. Compounds offer strength and durability, can be deposited at low temperatures and tailored to exhibit specific properties.
The selection of material for a thin film coating is dependent on the application requirements. Metals are ideal for thermal and electrical conduction, while oxides are effective in offering protection. Compounds can be tailored to suit specific needs. Ultimately, the best material for a particular project will depend on the specific needs of the application.
What are the advantages of Mpcvd?
What is the difference between ALD and PECVD?
What does PECVD stand for?
PECVD is a technology that uses plasma to activate reaction gas, promote chemical reaction on the surface of substrate or near surface space, and generate solid film. The basic principle of plasma chemical vapor deposition technology is that under the action of RF or DC electric field, the source gas is ionized to form a plasma, the low-temperature plasma is used as the energy source, an appropriate amount of reaction gas is introduced, and the plasma discharge is used to activate the reaction gas and realize chemical vapor deposition.
According to the method of generating plasma, it can be divided into RF plasma, DC plasma and microwave plasma CVD, etc...
What are the advantages of using thin film deposition equipment?
What are the common applications of PACVD?
What are the methods to achieve optimal thin film deposition?
To achieve thin films with desirable properties, high-quality sputtering targets and evaporation materials are essential. The quality of these materials can be influenced by various factors, such as purity, grain size, and surface condition.
The purity of sputtering targets or evaporation materials plays a crucial role, as impurities can cause defects in the resulting thin film. Grain size also affects the quality of the thin film, with larger grains leading to poor film properties. Additionally, the surface condition is crucial, since rough surfaces can result in defects in the film.
To attain the highest quality sputtering targets and evaporation materials, it is crucial to select materials that possess high purity, small grain size, and smooth surfaces.
Uses of Thin Film Deposition
Zinc Oxide-Based Thin Films
ZnO thin films find applications in several industries such as thermal, optical, magnetic, and electrical, but their primary use is in coatings and semiconductor devices.
Thin-Film Resistors
Thin-film resistors are crucial for modern technology and are used in radio receivers, circuit boards, computers, radiofrequency devices, monitors, wireless routers, Bluetooth modules, and cell phone receivers.
Magnetic Thin Films
Magnetic thin films are used in electronics, data storage, radio-frequency identification, microwave devices, displays, circuit boards, and optoelectronics as key components.
Optical Thin Films
Optical coatings and optoelectronics are standard applications of optical thin films. Molecular beam epitaxy can produce optoelectronic thin-film devices (semiconductors), where epitaxial films are deposited one atom at a time onto the substrate.
Polymer Thin Films
Polymer thin films are used in memory chips, solar cells, and electronic devices. Chemical deposition techniques (CVD) offer precise control of polymer film coatings, including conformance and coating thickness.
Thin-Film Batteries
Thin-film batteries power electronic devices such as implantable medical devices, and the lithium-ion battery has advanced significantly thanks to the use of thin films.
Thin-Film Coatings
Thin-film coatings enhance the chemical and mechanical characteristics of target materials in various industries and technological fields. Anti-reflective coatings, anti-ultraviolet or anti-infrared coatings, anti-scratch coatings, and lens polarization are some common examples.
Thin-Film Solar Cells
Thin-film solar cells are essential to the solar energy industry, enabling the production of relatively cheap and clean electricity. Photovoltaic systems and thermal energy are the two main applicable technologies.
Are CVD diamonds real or fake?
What is the difference between PECVD and sputtering?
What is the difference between CVD and PECVD?
The difference between PECVD and traditional CVD technology is that the plasma contains a large number of high-energy electrons, which can provide the activation energy required in the chemical vapor deposition process, thus changing the energy supply mode of the reaction system. Since the electron temperature in the plasma is as high as 10000K, the collision between electrons and gas molecules can promote the chemical bond breaking and recombination of the reaction gas molecules to generate more active chemical groups, while the whole reaction system maintains a lower temperature.
So compared to the CVD process, PECVD can carry out the same chemical vapor deposition process with a lower temperature.
What factors should be considered when selecting thin film deposition equipment?
What factors should be considered when selecting a PACVD system?
Factors and Parameters that Influence Deposition of Thin Films
Deposition Rate:
The rate at which the film is produced, typically measured in thickness divided by time, is crucial for selecting a technology suitable for the application. Moderate deposition rates are sufficient for thin films, while quick deposition rates are necessary for thick films. It is important to strike a balance between speed and precise film thickness control.
Uniformity:
The consistency of the film across the substrate is known as uniformity, which usually refers to film thickness but can also relate to other properties such as the index of refraction. It is important to have a good understanding of the application to avoid under- or over-specifying uniformity.
Fill Capability:
Fill capability or step coverage refers to how well the deposition process covers the substrate's topography. The deposition method used (e.g., CVD, PVD, IBD, or ALD) has a significant impact on step coverage and fill.
Film Characteristics:
The characteristics of the film depend on the application's requirements, which can be categorized as photonic, optical, electronic, mechanical, or chemical. Most films must meet requirements in more than one category.
Process Temperature:
Film characteristics are significantly affected by process temperature, which may be limited by the application.
Damage:
Each deposition technology has the potential to damage the material being deposited upon, with smaller features being more susceptible to process damage. Pollution, UV radiation, and ion bombardment are among the potential sources of damage. It is crucial to understand the limitations of the materials and tools.
What safety considerations are associated with operating thin film deposition equipment?
4.9
out of
5
I'm amazed by the quick delivery and the quality of the product. It's a game-changer for our lab.
4.8
out of
5
The Slide PECVD tube furnace has exceeded our expectations. It's a valuable addition to our research facility.
4.7
out of
5
This PECVD machine is a lifesaver! It has helped us achieve remarkable results in our research.
4.9
out of
5
The durability of this product is exceptional. It has withstood rigorous use in our lab.
4.8
out of
5
The technological advancements in this PECVD system have revolutionized our research capabilities.
4.7
out of
5
I highly recommend this product. It's worth every penny and has enhanced our research efficiency.
4.9
out of
5
The Slide PECVD tube furnace is a fantastic investment. It has accelerated our research progress significantly.
4.8
out of
5
This PECVD system is user-friendly and has simplified our research procedures.
4.7
out of
5
The technical support provided by KINTEK SOLUTION is outstanding. They're always ready to assist us.
4.9
out of
5
The Slide PECVD tube furnace has revolutionized our research methodology. It's a must-have for any lab.
4.8
out of
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This PECVD machine is a game-changer. It has enabled us to achieve groundbreaking results in our research.
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