Plasma is generated in sputtering through a process called gas ionization. This involves creating a low-pressure gas environment inside a vacuum chamber and introducing a gas, typically an inert gas like argon. A high voltage is then applied to the gas, which ionizes the atoms and creates a plasma. The voltage required for gas ionization depends on the gas used and the gas pressure. For argon, a common gas used in sputtering, the ionization potential is around 15.8 electron volts (eV).
The plasma generation in sputtering is crucial because it facilitates the interaction between the sputtering gas and the target material. When the plasma is generated, it causes the gas ions to collide with the target surface. These collisions are energetic enough to dislodge atoms from the target surface, causing them to be ejected into the gas phase. This process is fundamental to the sputtering mechanism, where the ejected atoms travel and deposit on a substrate, forming a thin film.
The choice of using inert gases like argon or xenon as the sputtering gas is strategic. These gases do not react with the target material or combine with any process gases, and their high molecular weight contributes to higher sputtering and deposition rates. The inert nature of these gases ensures that the integrity of the target material is maintained throughout the sputtering process, which is essential for achieving the desired properties in the deposited film.
In summary, plasma in sputtering is generated by ionizing a sputtering gas, typically an inert gas, within a vacuum chamber using a high voltage. This ionization creates a plasma environment where gas ions can effectively interact with the target material, leading to the ejection and deposition of target atoms onto a substrate. This process is controlled and optimized by factors such as gas pressure, voltage, and the positioning of the substrate to ensure uniform coating.
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