The different types of sputtering include DC diode sputtering, RF-diode sputtering, magnetron diode sputtering, and ion beam sputtering.
1. DC diode sputtering: In DC diode sputtering, a low-pressure plasma of argon gas is ignited between a target and a substrate using a DC voltage of 500-1000 V. Positive argon ions precipitate atoms out of the target, which then migrate to the substrate and condense there. However, only electrical conductors can be sputtered in this process, and low sputtering rates are achieved.
2. RF-diode sputtering: RF-diode sputtering involves the use of radio frequency (RF) power to generate a plasma between the target and the substrate. The RF power is used to ionize the argon gas and accelerate the ions towards the target, causing sputtering. This method allows for higher sputtering rates compared to DC diode sputtering and can be used for both conductive and insulating materials.
3. Magnetron diode sputtering: Magnetron diode sputtering is a variation of RF-diode sputtering where a magnetic field is applied near the target surface. The magnetic field traps electrons near the target, enhancing the plasma density and increasing the sputtering rate. This method is commonly used for depositing metallic films with high adhesion and density.
4. Ion beam sputtering: Ion beam sputtering involves the use of a high-energy ion beam to sputter atoms from the target material. The ion beam is generated by ionizing a gas such as argon and accelerating the ions towards the target. This method allows for precise control over the sputtering process and is often used for depositing high-quality thin films with low contamination levels.
Each type of sputtering has its own advantages and limitations, and the choice of method depends on the specific requirements of the coating application.
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