The sputtering process is a popular method for depositing thin films, but it comes with several drawbacks that need to be considered. Here are the key disadvantages:
11 Disadvantages of the Sputtering Process
1. Low Deposition Rates
Compared to other deposition methods like thermal evaporation, sputtering rates are generally low. This means that it takes longer to deposit a desired thickness of film.
2. Non-Uniform Deposition
In many configurations, the distribution of the deposition flux is non-uniform. This requires moving fixturing or other methods to obtain films of uniform thickness.
3. Expensive Targets
Sputtering targets can be costly, and the material usage may not be efficient. This adds to the overall cost of the process.
4. Heat Generation
Most of the energy incident on the target during sputtering becomes heat, which needs to be removed. This can be challenging and may require additional cooling systems.
5. Contamination Problems
The diffuse transport characteristic of sputtering makes it difficult to fully restrict where the atoms go. This can lead to contamination problems in the deposited film.
6. Difficulty in Active Control
Compared to other deposition techniques like pulsed laser deposition, controlling layer-by-layer growth in sputtering is more challenging. Additionally, inert sputtering gases can be built into the growing film as impurities.
7. Gas Composition Control
In reactive sputter deposition, the gas composition needs to be carefully controlled to prevent poisoning the sputtering target.
8. Material Limitations
The selection of materials for sputtering coatings may be limited due to their melting temperature and susceptibility to degradation by ionic bombardment.
9. High Capital Expenses
Sputtering requires high capital expenses for equipment and setup, which can be a significant investment.
10. Limited Deposition Rates for Some Materials
The rates of deposition for certain materials, such as SiO2, can be relatively low in sputtering.
11. Impurity Introduction
Sputtering has a greater tendency to introduce impurities into the substrate compared to deposition by evaporation, as it operates under a lesser vacuum range.
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