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CVD boron doped diamond

CVD materials

CVD boron doped diamond

Item Number : cvdm-07

Price varies based on specs and customizations


Diameter
100mm
thickness
0.3-2mm
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Introduction

Chemical Vapor Deposition (CVD) boron-doped diamond is a unique material that combines the extraordinary properties of diamond with controllable electrical conductivity. By precisely introducing boron atoms into the diamond lattice during CVD growth, it becomes a versatile material with tailored electrical properties, ranging from insulating to highly conductive. This enables diverse applications in electronics, sensors, heat management, optics, and quantum technologies.

CVD boron doped diamond

Applications

Chemical Vapor Deposition (CVD) boron-doped diamond is a versatile material with exceptional properties, offering unique solutions to challenges across multiple industries, from electronics to quantum technologies. Its continued development and integration into various applications hold great promise for advancing technology and scientific research in the years to come.

  • Electronics: High-power electronic devices, high-frequency transistors, diodes, field-effect transistors (FETs)
  • Sensors: Temperature, pressure, radiation, gas composition
  • Heat Management: Heat spreaders, heat sinks, thermal management solutions
  • Optics and Photonics: Optical windows, lenses, substrate for quantum optics experiments
  • Quantum Technologies: Quantum computing, quantum communication, quantum sensing applications

Features

  • Exceptional Thermal Conductivity: CVD boron-doped diamond possesses outstanding thermal conductivity, enabling efficient dissipation of heat in high-power electronics, laser systems, and microelectronics.

  • Tailorable Electrical Conductivity: Through precise control of boron concentration during the CVD growth process, the electrical conductivity of CVD boron-doped diamond can be customized over a wide range, from insulating to highly conductive.

  • Broad Spectral Transparency: CVD boron-doped diamond exhibits transparency across a broad spectral range, making it suitable for applications in optics and photonics, such as optical windows and lenses.

  • Color Center Hosting: Boron-doped diamond can host color centers, which are defects in the diamond lattice that exhibit unique optical properties. These color centers have applications in quantum optics experiments and quantum information processing.

  • High Breakdown Voltage: CVD boron-doped diamond can withstand high breakdown voltages, making it ideal for high-power electronic devices operating in harsh environments.

  • High Carrier Mobility: Boron-doped diamond possesses high carrier mobility, enabling faster switching speeds and improved performance in electronic devices.

  • Wide Potential Window: Boron-doped diamond has a wide potential window of approximately 3.5 V, allowing for the application of "over-potentials" to stimulate high-energy chemical reactions.

  • Low Background Currents: Boron-doped diamond electrodes exhibit low background currents in cyclic voltammetry scans due to the small capacitance-layer at the semiconductor-like interface with electrolyte solutions.

  • Chemical Inertness: CVD boron-doped diamond is chemically inert, making it resistant to corrosion and suitable for harsh environments.

  • Quantum Properties: Boron-doped diamond has promising applications in quantum technologies, such as quantum computing, quantum communication, and quantum sensing, due to its long coherence times and ability to host individual quantum bits (qubits) at room temperature.

Principle

Chemical Vapor Deposition (CVD) boron-doped diamond is created by introducing boron atoms into the diamond lattice during the CVD growth process. This doping process controls the material's electrical conductivity, allowing for customization from insulating to highly conductive.

Advantages

  • Semiconducting Behavior: Boron doping introduces charge carriers into the diamond lattice, enabling control of electrical conductivity, ranging from insulating to highly conductive, making it suitable for various electronic applications.

  • High Thermal Conductivity: Boron-doped diamond possesses exceptional thermal conductivity, surpassing other semiconductors, enabling efficient heat dissipation in high-power electronic devices, laser systems, and microelectronics.

  • Wide Spectral Transparency: Boron-doped diamond exhibits transparency across a broad spectral range, from ultraviolet to infrared, making it valuable for optical windows, lenses, and applications in optics and photonics.

  • Color Centers: Boron-doped diamond can host color centers, which are atomic-scale defects with unique optical and spin properties. These color centers find applications in quantum technologies, including quantum computing, quantum communication, and quantum sensing.

  • Chemical Inertness: Boron-doped diamond is chemically inert, resistant to harsh environments, and compatible with various chemicals, making it suitable for applications in corrosive or extreme conditions.

  • Mechanical Hardness: Boron-doped diamond inherits the exceptional mechanical hardness of diamond, providing durability and resistance to wear and tear, even in demanding applications.

  • Tailored Electrical Properties: The concentration of boron atoms can be precisely controlled during the CVD growth process, allowing for customization of the material's electrical conductivity over a wide range, enabling optimization for specific applications.

  • Low Temperature Deposition: Chemical Vapor Deposition (CVD) process is typically carried out at low temperatures, enabling integration with a wide range of substrates and compatibility with various device fabrication processes.

  • Industrial Compatibility: CVD boron-doped diamond is compatible with industrial manufacturing processes, enabling scalable and cost-effective production, making it suitable for high-volume applications.

Specification

Available dimension:  Diameter100mm, thickness 0.3-2mm
Boron Concentration [B]:  2 to 6 x 1020 Atoms /cm3, averaged over 0.16 mm2
Bulk Resistivity (Rv):  2 to 1.8 x 10-3 Ohm m, ± 0.25 x 10-3 Ohm m
Solvent Window: >3.0V

FAQ

What are the key advantages and applications of Chemical Vapor Deposition (CVD) boron-doped diamond?

CVD boron-doped diamond offers exceptional properties, including high thermal conductivity, mechanical hardness, optical transparency, and controlled electrical conductivity. These advantages make it valuable in electronics, sensing, heat management, optics, and quantum technologies.

How is boron doping achieved during the growth of diamond films?

Boron atoms are introduced into the diamond lattice by adding a boron-containing gas, such as diborane or trimethyl borane, to the growth chamber during the deposition process. This intentional doping allows for precise control of the material's electrical conductivity.

What is the relationship between the concentration of boron atoms and the electrical conductivity of the diamond film?

At low doping levels (≤10^19 atoms cm−3), the diamond films behave as a semiconductor. As the doping concentration increases, the films transition to a semi-metal state with high electrical conductivity (≥10^20 atoms cm−3).

How can the electrical conductivity of the diamond film be tailored?

The electrical conductivity of the diamond film can be customized by precisely controlling the concentration of boron atoms during the growth process, allowing for the desired material properties.

What are the limitations or challenges associated with the fabrication of boron-doped diamond films?

Boron-doped diamond films can suffer from contamination originating from the hot filaments used in the deposition process. Additionally, the deformation of filaments and inhomogeneous substrate temperature distribution can pose challenges during fabrication.
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