Sputtering silicon is a process used to deposit a thin film of silicon onto a substrate, such as a silicon wafer. This method is called sputter deposition, which is a type of physical vapor deposition (PVD).
7 Steps to Understand the Process of Sputtering Silicon
1. Vacuum Chamber Setup
The sputtering process begins in a vacuum chamber. The substrate, typically a silicon wafer, is placed inside this chamber.
2. Sputtering Target Placement
The sputtering target, made of silicon, is also placed in the chamber. This target is attached to the cathode, while the substrate is connected to the anode.
3. Introduction of Inert Gas
An inert gas, usually argon, is introduced into the chamber. This gas serves as a medium to transfer the sputtered material from the target to the substrate.
4. Formation of Plasma
A negative electric charge is applied to the target material, which causes a plasma to form in the chamber. This plasma is created by bombarding the target with high-energy particles.
5. Sputtering of Silicon Atoms
High-energy particles, typically argon ions, collide with the atoms in the target material, causing them to be sputtered off.
6. Deposition of Silicon Film
The sputtered silicon atoms are then carried across the vacuum chamber by the inert gas and deposited onto the substrate.
7. Formation of Thin Film
The deposition process continues until a thin film of silicon with the desired thickness is formed on the substrate. The resulting silicon film can have various properties, such as reflectivity, electrical or ionic resistivity, or other specific characteristics, depending on the process parameters and conditions.
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