Sputtering is not a Chemical Vapor Deposition (CVD) process.
Sputtering is a Physical Vapor Deposition (PVD) technique.
4 Key Differences Explained
1. Sputtering as a PVD Technique
Sputtering involves the use of high-speed ions to knock atoms from a source material, typically a target, into a plasma state.
These atoms are then deposited onto a substrate.
This process does not involve chemical reactions but rather physical interactions between ions and the target material.
The reference states, "Physical Vapor Deposition (PVD) consists of different methods, such as evaporation, sputtering, and molecular beam epitaxy (MBE)."
2. Chemical Vapor Deposition (CVD)
CVD involves the use of volatile precursors that undergo chemical reactions to deposit a film on a substrate.
The reference explains, "Chemical Vapor Deposition is similar to PVD, but differs in that CVD uses a volatile precursor to deposit a gaseous source material onto the surface of a substrate. A chemical reaction initiated by heat or pressure causes the coating material to form a thin film on the substrate in a reaction chamber."
3. Distinction Between CVD and PVD (Including Sputtering)
The key distinction lies in the nature of the deposition process.
CVD relies on chemical reactions between precursors and the substrate, whereas PVD (including sputtering) involves the physical deposition of atoms or molecules without chemical reactions.
The reference clarifies, "However, what defines CVD is the chemical reaction that occurs on the surface of the substrate. It is this chemical reaction that distinguishes it from PVD sputtering or thermal evaporation thin film deposition processes that usually don’t involve chemical reactions."
4. Deposition Characteristics
CVD typically results in a diffuse, multidirectional deposition due to the gaseous nature of the precursors, which can coat uneven surfaces more uniformly.
In contrast, PVD (including sputtering) is a line-of-sight deposition, meaning the deposition occurs where the vapor or plasma can directly reach, which can affect the thickness and uniformity on complex or uneven surfaces.
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