Silicon carbide (SiC) is a material with several unique properties that make it valuable in various industrial and high-tech applications.
However, it also has some limitations that need to be considered when selecting and applying it in different environments.
What are the limitations of silicon carbide? (3 Key Challenges)
1. Processing Difficulties
Silicon carbide is a very hard and brittle material.
This makes it challenging to process and manufacture into large or complex shapes.
The high hardness and resistivity of SiC ceramics require special manufacturing techniques.
One such technique is electric discharge machining (EDM).
EDM can improve the machinability of SiC when its resistivity is reduced to below 100Ω·cm.
This allows for the fabrication of intricate parts.
2. Increased Electrical Resistance
One significant drawback of SiC heating elements is their susceptibility to reactions with atmospheric gases at high temperatures.
These reactions can alter the conductive cross-section of the element.
This leads to a gradual increase in electrical resistance over time.
The resistance of a silicon carbide ceramic heating element can increase by up to 300% before the end of its service life.
This can affect its performance and efficiency.
3. Thermal Shock Resistance
Although SiC has high thermal conductivity, it is less resistant to thermal shock compared to other materials.
Rapid temperature changes can induce thermal stresses and microcracks.
This can potentially damage the material.
The thermal expansion coefficient of SiC is relatively low.
However, its ability to withstand sudden temperature fluctuations is limited.
This can be a critical factor in applications involving rapid heating or cooling.
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