Silicon carbide (SiC) has several limitations, primarily related to its processing, electrical resistance, and thermal shock resistance.
Processing Difficulties: Silicon carbide is a very hard and brittle material, which makes it challenging to process and manufacture into large or complex shapes. The high hardness and resistivity of SiC ceramics necessitate special manufacturing techniques, such as electric discharge machining (EDM), to improve machinability. When the resistivity of SiC ceramics is reduced to below 100Ω·cm, it becomes suitable for EDM, allowing for the fabrication of intricate parts.
Increased Electrical Resistance: One significant drawback of SiC heating elements is their susceptibility to reactions with atmospheric gases at high temperatures. These reactions can alter the conductive cross-section of the element, leading to a gradual increase in electrical resistance over time. The resistance of a silicon carbide ceramic heating element can increase by up to 300% before the end of its service life, which can affect its performance and efficiency.
Thermal Shock Resistance: Although SiC has high thermal conductivity, it is less resistant to thermal shock compared to other materials. Rapid temperature changes can induce thermal stresses and microcracks, potentially damaging the material. The thermal expansion coefficient of SiC is relatively low, but its ability to withstand sudden temperature fluctuations is limited, which can be a critical factor in applications involving rapid heating or cooling.
These limitations highlight the need for careful consideration in the selection and application of SiC materials, particularly in environments where high temperatures, rapid temperature changes, or complex geometries are involved. Despite these challenges, SiC's unique properties continue to make it a valuable material in various industrial and high-tech applications.
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