Sputtering is a method used to create thin films.
It is a type of physical vapor deposition (PVD).
Unlike some other vapor deposition methods, the material does not melt.
Instead, atoms from the source material (target) are ejected by momentum transfer from a bombarding particle.
This bombarding particle is typically a gaseous ion.
This process allows for the deposition of thin films with excellent uniformity, density, purity, and adhesion.
Sputtering can be performed bottom-up or top-down.
It is particularly advantageous for materials with very high melting points.
5 Key Points to Understand
1. The Process of Sputtering
The process of sputtering involves the use of gaseous plasma to dislodge atoms from the surface of a solid target material.
These atoms are then deposited to form an extremely thin coating on the surface of the substrates.
2. The Sputtering Process Sequence
The sputtering process sequence begins with the introduction of a controlled gas into a vacuum chamber containing the target and substrate.
The gas is ionized, creating a plasma.
Ions from the plasma are accelerated towards the target.
They collide with the target material, causing atoms to be ejected.
These ejected atoms travel through the vacuum and deposit onto the substrate, forming a thin film.
3. Types of Sputtering
Sputtering itself contains multiple sub-types, including direct current (DC), radio frequency (RF), mid-frequency (MF), pulsed DC, and HiPIMS.
Each type has its own applicability.
This versatility allows sputtering to be used to deposit coatings of both conductive and insulating materials with very high chemical purity onto essentially any substrate.
4. Applications of Sputtering
The process is repeatable and can be used for medium to large batches of substrates.
It is a valuable technology for a wide variety of applications, including semiconductors, CDs, disk drives, and optical devices.
5. Advantages of Sputtering
Sputtering allows for the deposition of thin films with excellent uniformity, density, purity, and adhesion.
It is particularly advantageous for materials with very high melting points.
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