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High Purity Fused Quartz Boat for High Temperature Tube Furnaces and Semiconductor Processing

Assay Equipment Accessories & Consumables

High Purity Fused Quartz Boat for High Temperature Tube Furnaces and Semiconductor Processing

Item Number : KT-SYP

Price varies based on specs and customizations


Material Purity
≥ 99.99% Fused Quartz (SiO2)
Maximum Operating Temperature
1200°C Continuous / 1300°C Peak
Thermal Expansion Coefficient
5.5 × 10⁻⁷ /°C (20°C to 1000°C)
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Product Overview

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This high-purity fused quartz boat is engineered to provide an ultra-clean, thermally stable sample container for high-temperature laboratory tube furnaces, semiconductor processing equipment, and chemical vapor deposition reactors. Fabricated from premium semiconductor-grade fused silica, the vessel delivers exceptional optical clarity, structural integrity, and resistance to thermal stress during rapid heating and cooling cycles.

Primarily utilized across semiconductor fabrication, photovoltaic manufacturing, advanced metallurgy, battery material calcination, and synthetic chemical research, this carrier excels in demanding furnace atmospheres. The non-porous vitreous structure prevents process gas absorption and ensures inert sample isolation, making the container ideal for thermal oxidation, crystal growth, powder sintering, and catalytic vapor reactions.

Manufactured to exacting dimensional tolerances with pristine fire-polished edges, this combustion vessel guarantees reliable performance in both routine thermal testing and continuous industrial production. Its ultra-low trace element profile eliminates the risk of cross-contamination, ensuring that research laboratories and industrial cleanrooms achieve repeatable, dependable experimental outcomes under extreme thermal gradients.

Key Features

  • Ultra-High Chemical Purity: Constructed from 99.99% semiconductor-grade fused silica, this vessel prevents elemental leaching and cross-contamination during sensitive calcination, thermal reduction, and semiconductor doping processes.
  • Superior Thermal Shock Resistance: With an exceptionally low thermal expansion coefficient of 5.5 × 10⁻⁷ /°C, this unit withstands extreme thermal gradients and rapid furnace insertion or extraction cycles without fracturing, micro-cracking, or warping.
  • Exceptional Continuous Operating Range: Engineered for sustained operation up to 1200°C and short-term thermal excursions up to 1300°C, the equipment maintains structural rigidity and mechanical stability under intensive thermal loads.
  • Broad Chemical and Acid Inertness: The non-reactive vitreous surface exhibits total resistance to common corrosive acids, organic solvents, and neutral halogens, ensuring consistent substrate containment without chemical degradation.
  • Precision Fire-Polished Edges: Smoothly finished rims and seamless transition zones minimize mechanical stress concentrations, enhance structural resilience during manual or robotic handling, and prevent particle shedding in cleanroom facilities.
  • Low Gas Sorption and Vitreous Density: The fully dense, non-porous quartz matrix prevents atmospheric gas absorption or moisture retention, safeguarding vacuum integrity in low-pressure tube furnaces and hermetic reactors.
  • Optimized Thermal Transfer Uniformity: Uniform wall thickness across the bottom and sidewalls ensures rapid, homogenous heat conduction to contained powders, precursors, and wafers, mitigating localized hot spots during thermal processing.
  • Customizable Structural Configurations: Available in flat-bottom, round-bottom, handle-equipped, and multi-slot geometries to seamlessly accommodate distinct crucible tongs, push rods, substrate geometries, and automated loading mechanisms.

Applications

Application Description Key Benefit
Semiconductor Wafer Diffusion & Doping Holds silicon and compound semiconductor substrates inside horizontal quartz process tubes during high-temperature dopant drive-in and oxidation routines. Ultra-low alkali metal and transition metal concentrations eliminate wafer contamination and preserve minority carrier lifetimes.
Chemical Vapor Deposition (CVD & PECVD) Acts as a stable substrate and precursor vessel for graphene, carbon nanotube synthesis, 2D transition metal dichalcogenide growth, and thin-film coatings. Withstands reactive precursor gases and elevated thermal conditions without outgassing or catalyzing undesirable side reactions.
Lithium-Ion Battery Material Calcination Contains active cathode powders, solid-state electrolytes, and anode precursors during high-temperature atmospheric or vacuum thermal baking. Prevents iron, sodium, and heavy metal cross-contamination, ensuring pristine electrochemical capacity and cycling stability.
High-Temperature Powder Metallurgy & Sintering Carries metallic, ceramic, and composite powder compacts through reduction furnaces under controlled hydrogen, argon, or vacuum atmospheres. Maintains planarity under thermal load without adhering to or chemically bonding with metallic melts and sintered ceramics.
Phosphor & Optical Crystal Synthesis Serves as a reaction chamber for rare-earth doped luminescent phosphors, laser crystals, and scintillation materials undergoing prolonged thermal soaking. High optical transmission and inert reaction boundaries prevent discoloration and preserve optimal luminescence quantum efficiency.
Analytical Ashing & Combustion Analysis Accommodates organic, environmental, and geological samples during high-temperature combustion and gravimetric residue determinations. Total dimensional stability and mass constancy under thermal cycling guarantee precise analytical measurement accuracy.
Precious Metal Refining & Pyrometallurgy Houses gold, platinum-group metals, and high-purity catalysts during thermal purification, halogenation, and flux-assisted smelting reactions. Resists acid condensates and aggressive metallurgical fluxes, ensuring maximum precious metal recovery rates without container degradation.
Catalytic Gas-Solid Heterogeneous Reactions Houses packed catalyst pellets and porous reactant beds in tubular reactors exposed to continuous flowing reactant gases at elevated temperatures. Non-porous vitreous walls channel gas streams without bypass leakage or catalytic surface deactivation.

Technical Specifications

Dimensional Configurations

The KT-SYP series offers a standardized selection of combustion and carrier boats designed to match common process tube diameters and heating zone profiles. Custom dimensions, specialized divider walls, and slotted wafer boats are available upon request.

Model Identifier Outer Length (mm) Outer Width (mm) Outer Height (mm) Wall Thickness (mm) Usable Volume (mL) Handle Configuration
KT-SYP-50 50 ± 1.0 20 ± 0.5 15 ± 0.5 2.0 ± 0.2 10 Flat Rim / Rimless
KT-SYP-80 80 ± 1.0 25 ± 0.5 18 ± 0.5 2.0 ± 0.2 25 Integrated Quartz Hook
KT-SYP-100 100 ± 1.5 30 ± 0.8 20 ± 0.8 2.5 ± 0.3 45 Integrated Quartz Hook
KT-SYP-120 120 ± 1.5 35 ± 0.8 22 ± 0.8 2.5 ± 0.3 70 Integrated Quartz Hook
KT-SYP-150 150 ± 2.0 40 ± 1.0 25 ± 1.0 2.5 ± 0.3 115 Integrated End Loop
KT-SYP-200 200 ± 2.0 50 ± 1.0 30 ± 1.0 3.0 ± 0.3 220 Dual End Handles
KT-SYP-SLOT 120 ± 1.5 40 ± 1.0 30 ± 1.0 2.5 ± 0.3 Custom Multi-Slot Wafer Carrier (10–25 Substrates)

Physical and Thermal Material Properties

All KT-SYP quartz vessels are produced from synthetic and high-purity natural quartz sand, exhibiting consistent physical metrics throughout repetitive thermal cycling.

Property Specification Nominal Metric Value Testing Standard / Operational Condition
Silicon Dioxide (SiO2) Purity ≥ 99.99% Chemical assay and emission spectroscopy
Continuous Working Temperature 1150°C to 1200°C Oxidizing, inert, or vacuum furnace environments
Maximum Short-Term Operating Limit 1300°C Intermittent thermal peak (duration ≤ 30 min)
Softening Point ~1680°C ASTM C338 standard test method
Annealing Point ~1210°C ASTM C336 standard test method
Strain Point ~1120°C ASTM C336 standard test method
Coefficient of Thermal Expansion (CTE) 5.5 × 10⁻⁷ /°C Dilatometric measurement (20°C to 1000°C)
Bulk Density 2.20 g/cm³ Standard pycnometry at 20°C
Mohs Hardness 6.5 – 7.0 Scratch hardness scale
Compressive Strength 1100 MPa Ambient temperature compressive failure test
Flexural Tensile Strength 48 MPa Three-point bending verification
Dielectric Constant 3.75 Capacitance method at 1 MHz, 20°C
Optical Transmission Bandwidth 190 nm to 2500 nm > 90% transmission in visible spectrum
Hydroxyl (OH⁻) Concentration < 15 ppm Low-OH synthetic grade options available (< 5 ppm)

Chemical Purity and Trace Elemental Impurity Limits

To ensure suitability for cleanroom and semiconductor applications, trace metallic impurities are strictly controlled within fractional parts-per-million thresholds.

Element Symbol Maximum Threshold (ppm) Elemental Impact Analysis
Aluminum (Al) ≤ 14.0 Network-forming component; restricted to maintain high viscosity
Iron (Fe) ≤ 0.8 Suppressed to eliminate thermal discoloration and devitrification nucleation
Calcium (Ca) ≤ 0.6 Controlled to prevent alkaline-earth surface crystallization at high temperatures
Magnesium (Mg) ≤ 0.3 Kept minimal to avoid fluxing interactions during long-duration thermal soaks
Sodium (Na) ≤ 1.0 Critical control limit to eliminate mobile ion diffusion into silicon wafers
Potassium (K) ≤ 0.8 Controlled to prevent vapor-phase alkali migration in tube furnace lines
Titanium (Ti) ≤ 1.1 Limited to maintain high UV-visible optical transmittance
Copper (Cu) ≤ 0.1 Strictly bounded to preserve semiconductor minority carrier lifetimes
Nickel (Ni) ≤ 0.1 Suppressed to prevent metallic catalytic micro-inclusions in synthetic processes

Atmospheric and Chemical Compatibility Profile

Process Atmosphere / Chemical Agent Compatibility Assessment Operating Guidelines and Boundary Conditions
Inert Gases (Ar, N2, He) Fully Compatible Stable across the entire operating range up to 1200°C continuous
High Vacuum (< 10⁻⁵ mbar) Fully Compatible Negligible outgassing; maintain below 1150°C to avoid structural deformation
Oxidizing Environments (Air, O2) Fully Compatible Chemically inert; ideal for ashing, oxidation, and calcination up to 1200°C
Reducing Atmospheres (H2, Forming Gas) Compatible with Conditions Safe up to 1100°C; avoid exceeding 1150°C in pure dry hydrogen to prevent reduction
Concentrated Hydrofluoric Acid (HF) Incompatible Reacts readily with silicon dioxide; avoid contact with any HF solutions
Hot Concentrated Phosphoric Acid Incompatible Causes accelerated surface etching at temperatures above 150°C
Alkaline Solutions (NaOH, KOH) Conditional Use Tolerated at room temperature; rapid chemical dissolution occurs above 80°C

Why Choose This Product

  • Semiconductor-Grade Purity & Trace Element Control: Fabricated strictly from synthetic and natural fused quartz with purity exceeding 99.99%, this container guarantees total isolation against alkali metals and transition elements, protecting critical substrates from contamination.
  • Uncompromised Thermal Gradient & Shock Tolerance: Engineered with a near-zero thermal expansion coefficient, the equipment permits rapid temperature ramps and abrupt furnace loading or unloading without micro-fracturing or catastrophic mechanical failure.
  • Precision Dimensional Uniformity & Fire-Polished Integrity: Computer-controlled thermal forming and precision fire-polishing yield uniform wall thicknesses and reinforced stress-free edges, extending service lifetimes and facilitating smooth robotic integration.
  • Versatile Customization & Engineered Geometries: Whether your workflow demands specialized wafer-retention slots, integrated pull rings, gas-directing quartz baffles, or tailored lengths, custom configurations are rapidly prototyped and manufactured to exact tolerances.
  • Comprehensive Quality Assurance & Cleanroom Standards: Every unit undergoes strict spectroscopic impurity verification, dimensional coordinate checks, and ultrasonic cleanroom packaging to ensure ready-to-use deployment in demanding laboratory and industrial processes.

Contact our technical sales team today to request a quotation, discuss custom dimensional specifications, or explore volume procurement options for your laboratory or production line.

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High Purity Fused Quartz Boat for High Temperature Tube Furnaces and Semiconductor Processing

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