Silicon carbide (SiC) is processed through various methods including sintering, reaction bonding, crystal growth, and chemical vapor deposition (CVD). Each method has its unique characteristics and applications, contributing to the versatility and wide-ranging uses of SiC in both traditional and emerging industries.
Sintering: Sintering involves the use of pure SiC powder with non-oxide sintering aids. The process uses conventional ceramic forming techniques and requires sintering in an inert atmosphere at temperatures up to 2000°C or higher. This method is crucial for producing silicon carbide ceramics with excellent high-temperature mechanical strength, high hardness, high elastic modulus, high wear resistance, high thermal conductivity, and corrosion resistance. These properties make SiC suitable for applications in high-temperature kiln furniture, combustion, nozzles, heat exchangers, sealing rings, sliding bearings, bulletproof armor, space reflectors, fixture materials in semiconductor wafer preparation, and nuclear fuel cladding materials.
Reaction Bonding: Reaction bonded SiC is manufactured by infiltrating compacts of mixtures of SiC and carbon with liquid silicon. The silicon reacts with the carbon, forming additional silicon carbide which bonds the original SiC particles together. This method is particularly effective for creating materials with specific mechanical properties and is used in applications requiring high wear resistance and thermal shock resistance.
Crystal Growth and Chemical Vapor Deposition (CVD): Manufacturers use CVD to grow 3C- and 6H- silicon carbide on silicon wafer substrates. This process allows for the introduction of n-type and p-type dopants into the monocrystalline SiC films, making it cost-effective for developing relatively thick, impurity-free SiC crystals. The CVD-produced SiC exhibits low electrical resistance, making it a reasonable conductor of electricity. This property is advantageous for fabricating fine features using EDM methods, which are useful for generating tiny holes with high aspect ratios.
Industrial Preparation of SiC Powder: The industrial preparation of SiC powder involves methods such as the Acheson method (carbothermal reduction), silicon dioxide low-temperature carbothermal reduction, and silicon-carbon direct reaction. These methods synthesize SiC powder at different temperatures and result in either α-SiC or β-SiC, each with specific applications. α-SiC is primarily used for silicon carbide ceramic products, while β-SiC is used for precision grinding and polishing materials.
In summary, the processing of silicon carbide involves a range of sophisticated techniques tailored to exploit the material's unique properties for various industrial applications. The choice of processing method depends on the desired properties and the specific application of the SiC product.
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