Silicon dioxide films deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at low temperature and pressure exhibit several notable properties:
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Low Deposition Temperature: The PECVD process allows for the deposition of silicon dioxide films at temperatures significantly lower than traditional Chemical Vapor Deposition (CVD) methods. This typically ranges from 300°C to 350°C, compared to 650°C to 850°C required by CVD. This low-temperature operation is crucial as it minimizes thermal damage to the substrate and reduces the interdiffusion and reaction between the film and the substrate material.
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Reduced Internal Stress: The low deposition temperature in PECVD helps in reducing the internal stress that arises from the mismatch in the linear expansion coefficient between the film and the base material. This is important for maintaining the structural integrity and adhesion of the film on the substrate.
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High Deposition Rate: Despite the low temperatures, PECVD achieves high deposition rates, which are comparable to those of other CVD processes. This efficiency is particularly beneficial for industrial applications where throughput is a critical factor.
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Amorphous and Microcrystalline Films: The low-temperature deposition facilitated by PECVD is conducive to obtaining amorphous and microcrystalline films. These types of films are desirable in many electronic applications due to their uniform and stable properties.
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Uniform Film Properties and Thickness: The proprietary reactor design in PECVD systems ensures uniform gas distribution and temperature profiles across the substrate surface. This results in highly uniform film properties and thickness, which are essential for the reliability and performance of the deposited films in electronic devices.
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Good Step Coverage: PECVD provides excellent step coverage, meaning the film can conformally coat complex topographies on the substrate. This is crucial for the effective insulation and protection of intricate electronic components.
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Excellent Control of Material Properties: PECVD allows for precise control over various material properties such as refractive index, stress, and hardness. This precision is vital for tailoring the film properties to specific application requirements.
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Application in VLSI and ULSI Production: PECVD technology has been successfully applied in the production of very large scale integrated circuits (VLSI, ULSI) where it is used for forming protective silicon nitride films, interlayer insulating silicon oxide films, and in the production of thin film transistors (TFT) for active matrix LCD displays.
In summary, the properties of silicon dioxide films deposited by PECVD at low temperature and pressure make them highly suitable for advanced electronic applications, particularly in the semiconductor industry where precision, uniformity, and low thermal impact are critical.
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