When comparing thermal CVD and PECVD, it's important to understand the different temperature and energy sources used during the deposition process.
What is the difference between thermal CVD and PECVD? (4 Key Differences)
1. Energy Sources
Thermal CVD relies solely on thermal activation to drive the gas and surface reactions.
2. Temperature Range
Thermal CVD involves heating the substrate to high temperatures, typically above 500˚C, to promote the chemical reactions and deposition of the desired material.
PECVD utilizes both thermal energy and RF-induced glow discharge to control the chemical reactions.
The plasma created by the RF energy produces free electrons that collide with the reactant gases, dissociating them and generating the desired reactions.
3. Operational Temperature
PECVD operates at lower temperatures ranging from 100˚C to 400˚C.
This lower temperature is advantageous as it reduces stress on the material and provides better control over the deposition process.
4. Benefits of PECVD
PECVD offers benefits such as lower deposition temperatures, better control over thin film deposition, and the ability to deposit films with good dielectric properties.
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