Reactive sputtering is a specialized technique within the field of Physical Vapor Deposition (PVD).
It involves the deposition of thin films where the target material chemically reacts with a reactive gas to form a compound film on a substrate.
This process is particularly useful for creating thin films of compounds, which are typically more challenging to produce efficiently using traditional sputtering methods.
What is the Principle of Reactive Sputtering? (4 Key Points Explained)
1. Process Overview
In reactive sputtering, a target material (e.g., silicon) is sputtered in a chamber containing a reactive gas (e.g., oxygen or nitrogen).
The sputtered particles react with this gas to form compounds such as oxides or nitrides, which are then deposited onto a substrate.
This process is distinct from standard sputtering, where an inert gas like argon is used, and the target material is deposited without undergoing any chemical changes.
2. Enhanced Deposition Rates
The introduction of a reactive gas significantly speeds up the formation of compound thin films.
In traditional sputtering, the formation of compound films is slower because the elements must bond after they are deposited.
By facilitating this bonding within the sputtering process, reactive sputtering accelerates the deposition rate, making it more efficient for producing compound films.
3. Control and Configuration
The composition of the deposited film can be precisely controlled by adjusting the relative pressures of the inert and reactive gases.
This control is crucial for optimizing the functional properties of the film, such as stress in SiNx or the index of refraction in SiOx.
Thin film deposition sputter systems can be configured with various options, including substrate pre-heat stations, sputter etch or ion source capability for in situ cleaning, and substrate bias capability, to enhance the quality and efficiency of the deposition process.
4. Challenges and Models
Reactive sputtering processes often exhibit a hysteresis-like behavior, which complicates the control of the deposition process.
Proper management of parameters such as the partial pressure of the gases is essential.
Models like the Berg Model have been developed to predict and manage the impact of adding reactive gas to the sputtering process, helping in optimizing the deposition rates and the quality of the films.
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