Sputtering deposition is a popular method for creating thin films, but it is generally slower than evaporation deposition.
Why Sputtering Deposition is Slower than Evaporation Deposition? 4 Key Reasons Explained
1. Plasma-Induced Damage to Substrate
Sputtering uses a plasma, which generates high-speed atoms that bombard the substrate.
This bombardment can cause damage to the substrate and slow down the deposition process.
In contrast, evaporation deposition involves the evaporation of atoms from a source, which typically results in a lower number of high-speed atoms.
2. Introduction of Impurities
Sputtering operates under a lesser vacuum range than evaporation deposition, which can introduce impurities in the substrate.
The plasma used in sputtering has a greater tendency to introduce impurities compared to the higher vacuum conditions used in evaporation deposition.
3. Lower Temperature and Deposition Rate
Sputtering is performed at a lower temperature than e-beam evaporation, which affects the deposition rate.
Sputtering has a lower deposition rate, particularly for dielectrics.
However, sputtering provides better coating coverage for more complex substrates and is capable of producing high purity thin films.
4. Limited Control of Film Thickness
Sputtering deposition allows for high deposition rates without limitations on thickness, but it does not allow for accurate control of film thickness.
On the other hand, evaporation deposition allows for better control of film thickness.
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