Silicon deposition is a critical process in various industries, especially in semiconductor manufacturing.
There are two primary methods used for silicon deposition: Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD).
These processes are essential for depositing thin layers of silicon and its compounds on substrates.
The thickness of these layers can range from a few nanometers to several micrometers.
What are the methods of silicon deposition? 4 Key Techniques Explained
1. Physical Vapor Deposition (PVD)
PVD is a method where materials are vaporized into the gas phase and then condensed onto a substrate.
This technique is often used for depositing thin films of metals and some semiconductors.
However, the specific details of PVD application for silicon deposition are not extensively detailed in the provided reference.
2. Chemical Vapor Deposition (CVD)
CVD is a more commonly used method for silicon deposition.
It involves the formation of thin films through chemical reactions between gaseous precursors.
The reference provides detailed information on several types of silicon films that can be deposited using CVD.
2.1 Silicon Dioxide Deposition
Silicon dioxide (SiO2) is deposited using silicon precursor gases like dichlorosilane or silane, combined with oxygen precursors such as oxygen and nitrous oxide.
The process typically occurs at low pressures (a few millitorr to a few torr).
This method is crucial for creating passivating layers in photovoltaic cells.
2.2 Silicon Nitride Deposition
Silicon nitride films are formed from silane and ammonia or nitrogen.
These plasma-deposited films are not pure nitrides due to the significant presence of hydrogen.
Hydrogen influences properties such as IR and UV absorption, stability, mechanical stress, and electrical conductivity.
2.3 Doping of Polysilicon
To modify the electrical properties of polysilicon, it is often doped.
The reference mentions three methods: furnace doping, ion implantation, and in-situ doping.
Furnace doping involves predepositing dopants from a liquid, solid, or gas, but lacks process control.
Ion implantation is preferred for its precise control over the depth of doping.
In-situ doping involves adding doping gases like diborane or phosphine during the deposition process.
This can complicate process control in batch reactors but is manageable in single wafer reactors.
2.4 Deposition of Other Silicon Compounds
CVD is also used to deposit other silicon compounds such as silicon-germanium.
These compounds are important for various semiconductor applications.
3. Other Deposition Techniques
The reference also briefly mentions other methods capable of depositing film layers down to the level of single atoms.
These methods include doping pure silicon to give it semiconducting properties.
Newer methods involve the deposition of polymer compounds for applications in flexible solar cells and OLEDs.
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