In the Chemical Vapor Deposition (CVD) synthesis of graphene, the choice of precursors is crucial. These precursors are essential for the decomposition process that forms graphene layers on metal substrates.
3 Key Types of Precursors Used in CVD Synthesis of Graphene
1. Solid Precursors
Solid carbon sources like hexachlorobenzene and waste solid plastic are commonly used.
Hexachlorobenzene is heated to 360°C on copper foil substrates to decompose and form single-layer graphene.
Waste solid plastic is pyrolyzed at high temperatures (up to 500°C) and then deposited as a carbon source.
These solid precursors allow for decomposition at lower temperatures, making them suitable for atmospheric pressure CVD processes.
2. Liquid Precursors
Liquid carbon sources, such as hexane, are evaporated and introduced into the CVD reactor using bubblers.
The concentration of the vapor is controlled by bubbling inert gas through the liquid.
However, controlling liquid precursors can be challenging, which limits their widespread use in CVD synthesis of graphene.
3. Gaseous Precursors
Gaseous precursors are the most extensively used in CVD techniques for graphene synthesis.
Common gaseous precursors include methane (CH4), acetylene, and ethylene.
These gases are introduced into the reaction chamber through a gas delivery system.
The decomposition of these gases at high temperatures on metal substrates leads to the formation of graphene layers.
The presence of other components like oxygen and hydrogen can significantly impact the deposition and growth of graphene, affecting the morphology and size of the graphene grains.
In the CVD process, these precursors undergo pyrolysis to form disassociated carbon atoms, which then assemble into the structure of graphene on the surface of metal substrates.
The choice of precursor and the conditions under which it is processed (such as temperature and pressure) are critical factors that influence the quality and properties of the resulting graphene.
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