Chemical vapor deposition (CVD) is a process used to deposit thin films and coatings of high quality onto a substrate by using gaseous or vapor precursors in a vacuumed environment. The process involves three main stages: diffusion of the reaction gas onto the substrate surface, adsorption of the reaction gas onto the substrate surface, and chemical reaction on the substrate surface to form a solid deposit. The resulting vapor phase by-products are then released from the substrate surface.
The deposition material, which can vary depending on the project, mixes with a precursor substance, often a halide or hydride, which prepares and transports the deposition material to the substrate or intended surface. This combination enters a vacuum chamber, where the deposition material forms a uniform layer on the substrate, and the precursor breaks down and exits via diffusion.
CVD is advantageous due to its ability to deposit a wide variety of materials, including metal films, non-metal films, multi-component alloy films, and ceramic or compound layers. The process can be carried out at atmospheric pressure or low vacuum, allowing for good wrap-around properties and uniform coating of complex shaped surfaces or deep or fine holes in the workpiece. Additionally, CVD produces coatings with high purity, good denseness, low residual stress, and good crystallization.
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