The deposition rate of electron beam evaporation is a crucial factor in the efficiency of the process.
This rate can vary significantly, ranging from 0.1 nm per minute to 100 nm per minute.
The high deposition rate is primarily due to the direct transfer of energy from the electron beam to the target material.
This method is particularly effective for metals with high melting points.
The process involves using a focused electron beam to heat and evaporate metals.
The temperature of the electrons during this process is typically around 3000 °C.
A 100 kV DC voltage source is used to accelerate the electrons towards the target material.
This localized heating at the beam bombardment site on the surface of the source ensures minimal contamination.
When the heated electrons strike the source material, their kinetic energy is converted into thermal energy.
This thermal energy heats up the source surface, leading to the production of vapor.
When temperatures are sufficiently high, vapor is produced and coats the surface of the substrate.
The process is highly controllable and repeatable.
It is also compatible with the use of an ion source to enhance thin film performance characteristics.
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