When it comes to silicon nitride (SiN) deposition, two common methods are LPCVD (Low Pressure Chemical Vapor Deposition) and PECVD (Plasma Enhanced Chemical Vapor Deposition).
4 Key Differences Between LPCVD SiN and PECVD SiN
1. Deposition Temperature
- LPCVD SiN is deposited at a higher temperature compared to PECVD SiN.
- LPCVD typically requires temperatures above 800°C.
- PECVD can be done at lower temperatures, often below 400°C.
2. Substrate Requirement
- LPCVD requires a silicon substrate.
- PECVD can utilize a tungsten-based substrate.
- LPCVD relies on the presence of a silicon substrate for the deposition process.
- PECVD does not necessarily need a silicon substrate.
3. Film Characteristics
- LPCVD SiN provides a film with a lower etch rate compared to PECVD SiN.
- LPCVD films have a higher hydrogen content and may contain pinholes, but they have a longer film life.
- PECVD films have a lower hydrogen content and are commonly used for passivation layers due to their stoichiometric, low-pressure, or super-low-stress characteristics.
4. Deposition Rate
- LPCVD has a lower deposition rate compared to PECVD.
- PECVD offers a higher deposition rate and more flexibility in terms of growth rates.
In summary, LPCVD SiN is typically used when a higher deposition temperature is not a concern, and a lower etch rate is desired. It requires a silicon substrate and has a slower deposition rate. On the other hand, PECVD SiN is used when a low deposition temperature is necessary, and faster growth rates are desired. It can be deposited on various substrates and provides good passivation layer characteristics.
Continue exploring, consult our experts
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