The magnetic field sputtering of DC magnetron involves the use of a magnetic field to enhance the sputtering process in a DC discharge. This method increases the efficiency of the sputtering process by trapping electrons near the target surface, thereby increasing the ionization rate and the sputtering rate.
Summary of the Answer: The DC magnetron sputtering process utilizes a combination of electric and magnetic fields to improve the sputtering efficiency. The magnetic field is arranged parallel to the target surface, which traps electrons and causes them to follow a spiral path, increasing their interaction with gas atoms and enhancing ionization. This leads to a higher rate of ion bombardment on the target, resulting in increased sputtering rates without the need to increase the operating pressure.
Detailed Explanation:
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Magnetic Field Configuration: In DC magnetron sputtering, an additional magnetic field is applied behind the cathode plate. This field is designed to be parallel to the target surface. The magnetic field lines are arranged to create a closed path that traps electrons near the target, as opposed to allowing them to escape into the surrounding space.
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Effect on Electrons: The superposition of the electric field (perpendicular to the target surface) and the magnetic field causes the charged particles, particularly electrons, to move in cycloid orbits rather than straight lines. This spiral motion significantly increases the path length of electrons over the target surface, leading to more collisions with gas atoms and hence, higher ionization rates.
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Increased Ionization and Sputtering Rate: The increased ionization due to the trapped electrons results in a higher density of ions in the vicinity of the target. These ions are accelerated by the electric field towards the target, where they cause sputtering. The magnetic field does not significantly affect the motion of ions due to their larger mass, so they continue to move in straight lines towards the target, leading to efficient sputtering.
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Operational Advantages: The use of a magnetic field in DC magnetron sputtering allows the process to be operated at lower pressures (around 100 Pa) and voltages (around -500 V) compared to conventional sputtering, which typically requires higher pressures (10 Pa) and voltages (between -2 kV to 3 kV). This not only reduces the energy consumption but also minimizes the incorporation of background gases into the growing film and reduces energy losses in sputtered atoms due to gas collisions.
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Applications and Configurations: DC magnetron sputtering is widely used for depositing conductive materials using a direct current power supply. The configuration of the magnetic field can be varied, with balanced configurations confining the plasma to the target region and unbalanced configurations allowing some magnetic field lines to extend towards the substrate. This flexibility allows for tailored solutions depending on the specific application requirements.
In conclusion, the magnetic field sputtering of DC magnetron is a highly efficient method for material deposition, leveraging the synergistic effects of electric and magnetic fields to enhance the sputtering process, reduce operational parameters, and improve the quality of the deposited films.
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