The mechanism of reactive sputtering involves a chemical reaction between atoms sputtered from a metal target and reactive gas molecules diffused from a discharge gas on the substrate. This reaction produces compound thin films, which serve as the coating material on the substrate.
During reactive sputtering, a non-inert gas, such as oxygen or nitrogen, is introduced into the sputtering chamber along with an elemental target material, such as silicon. When the metal molecules from the target reach the substrate surface, they react with the reactive gas molecules to form a new compound. This compound is then deposited as a thin film on the substrate.
The reactive gases used in the process, such as nitrogen or oxygen, chemically react with the metal molecules on the substrate surface, resulting in the formation of a hard coating. The reactive sputtering process combines the principles of conventional sputtering and Chemical Vapor Deposition (CVD). It involves the use of a large amount of reactive gas for film growth, with the excess gas being pumped out. The sputtering of metals is faster compared to compounds, which sputter more slowly.
The introduction of a reactive gas into the sputtering chamber, such as oxygen or nitrogen, enables the production of oxide or nitride films, respectively. The composition of the film can be controlled by adjusting the relative pressures of the inert and reactive gases. Stoichiometry of the film is an important parameter for optimizing functional properties, such as the stress in SiNx and the index of refraction of SiOx.
Reactive sputtering requires proper control of parameters such as the partial pressure of working (or inert) and reactive gases to achieve desired depositions. The process exhibits hysteresis-like behavior, making it necessary to find ideal working points for efficient film deposition. Models, such as the Berg Model, have been proposed to estimate the impact of the reactive gas on sputtering processes.
In summary, reactive sputtering is a variation of the plasma sputtering process where a chemical reaction occurs between sputtered atoms and reactive gases, resulting in the deposition of compound thin films on a substrate. The composition of the film can be controlled by adjusting the relative pressures of the inert and reactive gases.
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