Reactive sputtering is a process that involves a chemical reaction between atoms sputtered from a metal target and reactive gas molecules diffused from a discharge gas on the substrate.
This reaction produces compound thin films, which serve as the coating material on the substrate.
5 Key Points Explained
1. Introduction of Non-Inert Gas
During reactive sputtering, a non-inert gas, such as oxygen or nitrogen, is introduced into the sputtering chamber along with an elemental target material, such as silicon.
2. Chemical Reaction on Substrate
When the metal molecules from the target reach the substrate surface, they react with the reactive gas molecules to form a new compound.
This compound is then deposited as a thin film on the substrate.
3. Formation of Hard Coatings
The reactive gases used in the process, such as nitrogen or oxygen, chemically react with the metal molecules on the substrate surface, resulting in the formation of a hard coating.
4. Combination of Sputtering and CVD
The reactive sputtering process combines the principles of conventional sputtering and Chemical Vapor Deposition (CVD).
It involves the use of a large amount of reactive gas for film growth, with the excess gas being pumped out.
5. Control of Film Composition
The composition of the film can be controlled by adjusting the relative pressures of the inert and reactive gases.
Stoichiometry of the film is an important parameter for optimizing functional properties, such as the stress in SiNx and the index of refraction of SiOx.
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