Plasma Enhanced Chemical Vapor Deposition (PECVD) is a process that involves depositing thin films on a substrate at low temperatures using plasma to enhance chemical reactions.
This process is essential in the semiconductor industry for depositing materials on surfaces that cannot withstand high temperatures.
4 Key Steps of the PECVD Workflow
1. Setup and Gas Introduction
A PECVD system consists of two electrodes: one grounded and one RF-energized.
Reactant gases are introduced between these electrodes.
2. Plasma Generation
The RF energy (typically at 13.56 MHz) generates a plasma between the electrodes through capacitive coupling.
This ionization of the gas creates reactive species.
3. Chemical Reactions
The reactive species undergo chemical reactions, driven by the plasma energy.
This forms a film on the substrate surface.
4. Film Growth
The reactive species diffuse through the sheath to reach the substrate.
They adsorb and interact, leading to the growth of the film.
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