To increase the sputtering rate, one must focus on enhancing the ionization of the plasma and optimizing various sputtering parameters. This can be achieved by increasing the target's sputtering rate, improving plasma ionization, and adjusting key parameters such as target power density, gas pressure, substrate temperature, and deposition rate.
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Increasing the Target's Sputtering Rate: At the same discharge power, more ions must be obtained to increase the sputtering rate. This can be achieved by increasing the ionization degree of the plasma. Improved plasma ionization can effectively be achieved when full use is made of secondary electrons' energy. The more ions produced, the more atoms ejected from the target, which increases the efficiency of the sputtering process.
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Improving Plasma Ionization: Utilizing secondary electrons' energy is crucial for improving plasma ionization. In magnetron sputtering, an additional magnetic field under the target can help electrons fly in long spiral tracks, increasing the probability of ionization. This not only leads to higher sputter rates but also better focus on the target.
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Adjusting Key Parameters: The key magnetron sputtering parameters include target power density, gas pressure, substrate temperature, and deposition rate. For instance, optimizing the target power density can help achieve the desired sputtering rate and film quality. However, a higher target power density can increase the sputtering rate but may lead to lower film quality. Similarly, optimizing gas pressure, substrate temperature, and deposition rate can help realize desired film quality, properties, and uniformity.
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Using Appropriate Power Types: Depending on the material being sputtered, different types of power can be used. DC power is suitable for conductive materials, while RF power can sputter non-conductive materials. Pulsed DC has advantages for some processes such as reactive sputtering.
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Reactive Sputtering for Oxides: If oxides need to be deposited on the substrate, reactive sputtering is applied. In addition to the sputter gas Argon, Oxygen is introduced into the vacuum chamber. Oxygen reacts with the target material into oxides, enhancing the deposition process for specific materials.
By focusing on these strategies, one can effectively increase the sputtering rate while maintaining or improving the quality of the deposited thin films.
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