Understanding the differences between Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) is crucial for anyone involved in thin film deposition processes.
5 Key Points to Understand
1. Method of Creating Vapor
In PVD, vapor is created through physical means such as heating or sputtering.
CVD involves chemical reactions of gaseous precursors on the substrate surface to form a thin film.
2. Nature of the Deposition Process
PVD involves the ionization of gas molecules, which then dissociate into atoms and condense to form a thin film.
CVD involves the introduction of a gas into a reaction chamber where it chemically reacts with a solid material to create a thin film.
3. Key Aspects of Each Process
The key aspect of PVD is that the vapor formation and deposition are purely physical processes, with no chemical reactions involved.
The critical feature of CVD is the chemical reaction that occurs on the substrate surface, which leads to the formation of the film.
4. Suitability for Specific Applications
CVD is typically used for thin films ranging from a few nanometers to a few micrometers and is not well-suited for thicker films or three-dimensional structures.
PVD can be more versatile depending on the specific technique used.
5. Techniques Under PVD and CVD
Within PVD, techniques include evaporation by electronic gun, evaporation by cathodic arc, sputtering, and molecular beam epitaxy.
CVD techniques include thermal (conventional) CVD and plasma activated (PECVD).
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