Sputtering in plasma treatment refers to the process in which a high-energy plasma dislodges atoms from the surface of a solid target material. This process is commonly used to deposit thin films of materials onto substrates for various applications in optics, electronics, and more.
The sputtering technique involves introducing a controlled gas, typically argon, into a vacuum chamber. The chamber contains a cathode, which is the target material that will be deposited onto the substrates. When the cathode is electrically energized, it generates a self-sustaining plasma.
Within the plasma, the gas atoms become positively charged ions by losing electrons. These ions are then accelerated with sufficient kinetic energy to hit the target material and dislocate atoms or molecules from its surface. The dislodged material forms a vapor stream that passes through the chamber and strikes and sticks onto the substrates as a thin film or coating.
The process of sputtering involves the following steps:
1. Ions of inert gas, such as argon, are accelerated into the target material.
2. The ions transfer energy to the target material, causing it to erode and eject neutral particles.
3. The neutral particles from the target traverse through the chamber and are deposited as a thin film onto the surface of the substrates.
Sputtered films exhibit excellent uniformity, density, purity, and adhesion. This technique allows for the deposition of precise compositions, including alloys, by conventional sputtering. Reactive sputtering enables the deposition of compounds such as oxides and nitrides.
Sputtering is also used as an etching process to alter the physical properties of a surface. In this case, a gas plasma discharge is established between a cathode plating material and an anode substrate. The deposits formed through sputtering are typically thin, ranging from 0.00005 to 0.01 mm, and can include materials like chromium, titanium, aluminum, copper, molybdenum, tungsten, gold, and silver.
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