When it comes to chemical vapor deposition (CVD), two common methods are LPCVD and PECVD.
These methods have significant differences that affect their applications and the quality of the films they produce.
5 Key Differences Between LPCVD and PECVD
1. Deposition Temperature
LPCVD typically operates at higher temperatures, ranging from 500 to 1100°C.
PECVD, on the other hand, operates at lower temperatures, between 200 to 400°C.
The lower temperature in PECVD is ideal for applications where thermal cycling concerns or material limitations are a factor.
2. Film Quality
LPCVD films are generally of higher quality compared to PECVD films.
LPCVD films have a longer lifespan and higher deposition rates.
They have almost no hydrogen content and are more resistant to pinholes.
PECVD films have lower quality due to the lower deposition temperatures and higher hydrogen content, which can cause stress and affect device performance.
3. Film Types
LPCVD primarily uses silicon-based films.
It typically deposits silicon nitride films, which are commonly used as stressors and etch stops.
PECVD can produce both silicon-based and tungsten-based films.
PECVD is known for producing silicon oxide films.
4. Process
LPCVD uses a hot-wall tube reactor environment to provide energy to the reactants.
PECVD uses plasma to energize the reactants.
The plasma in PECVD allows for a more controlled and lower-temperature deposition process.
5. Applications
LPCVD is commonly used for epitaxial silicon deposition.
However, its capacity is limited compared to PECVD.
PECVD is more versatile and can be used for a wide range of applications, including thin film deposition, barrier layers, passivation, and insulating layers.
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