LPCVD polysilicon deposition is a critical process in semiconductor manufacturing.
Understanding the temperature range is essential for achieving the desired film properties.
5 Key Points to Know About the Temperature of LPCVD Polysilicon
1. Standard Temperature Range
The typical temperature range for LPCVD polysilicon deposition is between 600 to 650 degrees Celsius.
2. Variability in Temperature
LPCVD processes can be performed at temperatures as low as 425 degrees Celsius or as high as 900 degrees Celsius, depending on the specific application and desired properties of the film.
3. Growth Rate
The growth rate of polysilicon during LPCVD is between 10 and 20 nm per minute at temperatures between 600 and 650 degrees Celsius and pressures between 25 and 150 Pa.
4. Influence of Gases
The use of different gases, such as phosphine, arsine, or diborane, can affect the growth rate and properties of the deposited polysilicon film.
5. Film Characteristics
LPCVD polysilicon films have a higher hydrogen content and may contain pinholes compared to films deposited using other methods like PECVD.
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