The CVD (Chemical Vapor Deposition) process involves several steps:
1. Precursor Feeding: The precursor chemicals are fed into the CVD reactor. These precursors can be gases or vapors that will react to form the desired thin film on the substrate.
2. Transport to Substrate Surface: Once inside the reactor, the precursor molecules need to be transported to the surface of the substrate. This is typically achieved through a combination of fluid transport and diffusion.
3. Adsorption: The precursor molecules that reach the substrate surface must then adsorb onto it. Adsorption is the process by which the precursor molecules adhere to the surface.
4. Surface Reactions: Once adsorbed, the precursor molecules undergo chemical reactions on or near the substrate surface. These reactions can be either thermal or plasma-assisted, depending on the specific CVD method used.
5. Desorption: After the surface reactions occur, the by-product molecules and any unreacted precursor molecules need to desorb from the substrate surface. This allows space for more incoming precursor molecules to continue the deposition process.
6. Waste Treatment: The CVD process can produce waste materials, by-products, and unreacted precursor gases. These need to be treated and removed from the reaction chamber to maintain a clean environment and prevent contamination.
Overall, the CVD process involves the flow of precursor gases into a chamber, transport to the substrate surface, adsorption, surface reactions, desorption, and waste treatment. The specific conditions, such as temperature, pressure, and type of precursor gases, can vary depending on the desired thin film deposition and the specific CVD method being used.
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