Tech Team · Kintek Solution

The process of Atomic Layer Deposition (ALD) involves the sequential and self-limiting deposition of thin films on a substrate using gaseous precursors. This method allows for precise control over film thickness and uniformity, making it ideal for applications requiring high-quality, conformal coatings.

Summary of the ALD Process:

1. Precursor Exposure: The substrate is exposed to a first gaseous precursor which forms a monolayer through chemical bonding.
2. Purging: The chamber is then purged to remove any excess precursor.
3. Reactant Exposure: A second gaseous reactant is introduced, reacting with the monolayer to form the desired film.
4. Purging: The chamber is purged again to remove reaction by-products.
5. Repetition: This cycle is repeated to build up the film to the desired thickness.

Detailed Explanation:

• Precursor Exposure (Step 1): In the first step of ALD, a substrate, typically placed in a high-vacuum chamber, is exposed to a gaseous precursor. This precursor chemically bonds to the surface of the substrate, forming a monolayer. The bonding is specific and saturates the surface, ensuring that only a single layer is formed at a time.

• Purging (Step 2): After the monolayer formation, any remaining precursor that has not chemically bonded is removed from the chamber using high vacuum. This purging step is crucial to prevent unwanted reactions and to ensure the purity of the next layer.

• Reactant Exposure (Step 3 and 4): Following purging, a second gaseous reactant is introduced into the chamber. This reactant chemically reacts with the monolayer formed by the first precursor, leading to the deposition of the desired material. The reaction is self-limiting, meaning it only occurs with the available monolayer, ensuring precise control over the film's thickness.

• Purging (Step 4): After the reaction, by-products and any unreacted materials are purged from the chamber. This step is essential for maintaining the quality and integrity of the film.

• Repetition: The cycle of precursor exposure, purging, reactant exposure, and purging is repeated multiple times to build up the film to the desired thickness. Each cycle typically adds a layer of a few angstroms in thickness, allowing for very thin and controlled film growth.

ALD is particularly valued for its ability to produce films with excellent conformality and uniformity, even over complex geometries. This makes it highly suitable for applications in the semiconductor industry, where thin, high-quality dielectric layers are required. The process is also highly repeatable, ensuring consistent results across multiple depositions.

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