Thermal chemical vapor deposition (TCVD) is a method used for growing thin films.
It uses high temperatures to activate chemical reactions.
This process involves depositing a solid film on a heated surface due to chemical reactions in the vapor phase.
TCVD includes various technologies like metal organic chemical vapor deposition, chloride chemical vapor deposition, and hydride chemical vapor deposition.
What is the Process of Thermal Chemical Vapor Deposition? (4 Key Methods Explained)
1. Chemical Transport Method
In this method, the material for the thin film reacts with another substance in the source area to produce a gas.
This gas is then transported to the growth area where it undergoes a thermal reaction to form the desired material.
The forward reaction occurs during the transport process, and the reverse reaction happens during the crystal growth process.
2. Pyrolysis Method
This involves transporting volatile substances containing the elements of the film to the growth area.
It generates the required substances through thermal decomposition reactions.
The growth temperature for this method typically ranges from 1000 to 1050 degrees Celsius.
General Steps Involved in TCVD
Evaporation of a Volatile Compound
The substance to be deposited is first evaporated, turning into a vapor.
Thermal Decomposition or Chemical Reaction
The vapor undergoes thermal decomposition into atoms and molecules, or it reacts with other vapors, liquids, or gases at the substrate.
Deposition of Nonvolatile Reaction Products
The nonvolatile products of the reaction are then deposited onto the substrate.
Process Conditions
This process typically requires pressures ranging from a few torr to above atmospheric pressure.
It also requires relatively high temperatures, around 1000°C.
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