DC magnetron sputtering is a method used to deposit thin films of one material onto another.
The process starts by placing the target material, which will be the coating, inside a vacuum chamber.
This chamber is positioned parallel to the substrate that needs to be coated.
The vacuum chamber is then evacuated to remove gases like H2O, Air, H2, and Ar.
After evacuation, the chamber is backfilled with a high-purity inert gas, typically Argon.
Argon is chosen because of its mass and ability to transfer kinetic energy during high-energy molecular collisions in the plasma.
A DC electrical current, usually between -2 to -5 kV, is applied to the target material, which acts as the cathode.
This negative bias attracts positively charged ions from the plasma.
At the same time, a positive charge is applied to the substrate, making it the anode.
The electric field created by this setup accelerates the plasma, providing enough force to bombard the cathode.
This bombardment causes atoms from the target material to be ejected and to condense on the surface of the substrate, forming a thin film.
The key difference between magnetron sputtering and other sputtering methods like diode sputtering is the presence of a strong magnetic field near the target area.
This magnetic field causes electrons to spiral along magnetic flux lines near the target.
This setup keeps the plasma confined close to the target and prevents damage to the thin film being formed on the substrate.
This arrangement allows for a higher deposition rate and is particularly useful for depositing pure metals like Iron, Copper, and Nickel.
Overall, DC magnetron sputtering is a versatile and efficient method for depositing thin films, offering easy control and low operational costs, especially for large substrates.
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