The parts of chemical vapor deposition include:
1. Gas delivery system: This is responsible for delivering the precursor gases to the reactor chamber. The precursors used in CVD must be volatile and stable enough to be transported to the reactor.
2. Reactor chamber: This is where the CVD process takes place. It is designed to provide the necessary conditions for the deposition of thin films or coatings. The chamber may include features such as heating elements or plasma sources to facilitate the desired reactions.
3. Energy source: This is used to provide the energy required for the chemical reactions to occur. It can be in the form of heat, plasma, or other energy sources depending on the specific CVD process.
4. Vacuum system: A vacuum system is used to create and maintain the desired pressure conditions inside the reactor chamber. This is important for controlling the gas flow and ensuring the quality of the deposited films.
5. Exhaust system: This system is responsible for removing the by-products and unreacted gases from the reactor chamber. It helps to maintain a clean and controlled environment inside the chamber.
Other components that may be present in a CVD system include a loading/unloading system for substrates, a process automatic control system for monitoring and controlling the process parameters, and an exhaust gas treatment system for handling the waste gases generated during the deposition process.
Overall, the various components of a CVD system work together to enable the transport of precursor gases, the deposition of thin films or coatings on a substrate, and the removal of by-products and waste gases.
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