Silicon carbide (SiC) has a resistivity of less than 0.1 ohm-cm.
This low resistivity is especially notable in low resistivity Chemical Vapor Deposition (CVD) silicon carbide.
This characteristic significantly enhances its suitability for various applications in semiconductor manufacturing and other high-temperature, high-stress environments.
Explanation of Resistivity in Silicon Carbide
1. Material Composition and Structure
Silicon carbide is composed of tetrahedra of carbon and silicon atoms with strong bonds in the crystal lattice.
This structure makes SiC very hard and strong.
It also influences its electrical properties.
The strong covalent bonds contribute to its low resistivity by facilitating the movement of charge carriers through the material.
2. Electrical Conductivity
The low resistivity of SiC is directly related to its electrical conductivity.
Low resistivity SiC is described as having a bulk resistivity of less than 0.1 ohm-cm.
This level of resistivity indicates that SiC is a fairly good conductor of electricity.
This is crucial for its applications in wafer processing chambers, heaters, and electrostatic chucks, where electrical conductivity is essential.
3. Applications and Benefits
The low resistivity of SiC makes it ideal for use in environments that require electrical conductivity, wear resistance, and thermal shock resistance.
In semiconductor manufacturing, SiC is used in susceptors, processing chambers, and gas distribution plates.
Its ability to conduct electricity efficiently helps in controlling and distributing energy to the wafer.
This enhances the precision and efficiency of the deposition and etch processes.
4. Thermal and Chemical Properties
Beyond its electrical properties, SiC also exhibits high thermal conductivity (120-270 W/mK), low thermal expansion, and high thermal shock resistance.
These properties, combined with its chemical inertness and strength retention at high temperatures, make SiC a versatile material for high-temperature applications.
The protective silicon oxide coating that forms at high temperatures further enhances its durability and resistance to chemical attack.
In summary, the resistivity of silicon carbide, particularly in its low resistivity form, is a critical factor that contributes to its wide range of applications in high-tech industries.
Its low resistivity, coupled with its mechanical and thermal properties, makes SiC a material of choice for advanced technological applications requiring both electrical conductivity and durability at high temperatures.
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