The pressure for chemical vapor deposition (CVD) can vary depending on the specific method being used.
In CVD diamond growth, the process typically occurs under low pressure, ranging from 1–27 kPa (0.145–3.926 psi; 7.5–203 Torr). This low-pressure environment allows for the feeding of gases into a chamber, which are then energized to provide conditions for diamond growth on the substrate.
Low pressure chemical vapor deposition (LPCVD) is another method used in CVD. It is performed at pressures of 0.1–10 Torr and temperatures ranging from 200–800°C. LPCVD involves adding reactants to the chamber using a specialized precursor delivery system shower head. The chamber walls and shower head are cooled, while the substrate is heated. This promotes heterogeneous surface reactions. Once the reaction is complete, the by-products are removed using vacuum pumps.
Plasma enhanced chemical vapor deposition (PECVD) is another variation of CVD that uses plasma to provide the energy required for the deposition process. PECVD is performed at pressures of 2–10 Torr and relatively low temperatures ranging from 200–400°C. Electrical energy is used to create a neutral gas plasma, which facilitates the chemical reactions driving the deposition.
Other variations of CVD include HDP CVD and SACVD. HDP CVD uses a higher density plasma, allowing for lower temperature deposition (between 80–150°C) within the chamber. SACVD, on the other hand, takes place below standard room pressure and uses ozone (O3) to catalyze the reaction. The pressure for SACVD falls between about 13,300–80,000 Pa, with a high deposition rate that improves with increasing temperature until around 490°C.
Overall, the pressure for chemical vapor deposition can vary depending on the specific method being used, ranging from low pressures of a few Torr to higher pressures of thousands of Pa.
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