Plasma formation in sputtering is a crucial process that initiates the sputtering technique, which is used in Physical Vapor Deposition (PVD) to deposit thin films onto a substrate.
6 Key Steps Explained
1. Vacuum Chamber Preparation
The deposition chamber is first evacuated to a very low pressure, typically around 10^-6 torr, to minimize contamination from residual gases.
After achieving the desired vacuum, the sputtering gas, such as argon, is introduced into the chamber.
2. Application of Voltage
A voltage is applied between two electrodes in the chamber. This voltage is critical for initiating the ionization process.
3. Ionization and Plasma Formation
The applied voltage ionizes the sputtering gas, creating a glow discharge. In this state, free electrons collide with the gas atoms, causing them to lose electrons and become positively charged ions.
This ionization process transforms the gas into a plasma, a state of matter where electrons are dissociated from their atoms.
4. Acceleration of Ions
The positive ions of the sputtering gas are then accelerated towards the cathode (the negatively charged electrode) due to the electric field created by the applied voltage.
5. Bombardment and Sputtering
The accelerated ions collide with the target material, transferring their energy and causing atoms from the target to be ejected. These ejected atoms then travel and deposit on the substrate, forming a thin film.
6. Sputtering Rate
The rate at which material is sputtered from the target depends on several factors including the sputter yield, the molar weight of the target material, its density, and the ion current density.
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