Plasma is created in magnetron sputtering through a process called gas ionization. This involves several key steps and components. Let's break it down:
4 Key Steps to Creating Plasma in Magnetron Sputtering
1. Vacuum Chamber Setup
The process begins in a vacuum chamber. The pressure inside the chamber is reduced to create a low-pressure environment. This is crucial for the efficient generation of plasma.
2. Introduction of Sputtering Gas
An inert gas, typically argon or xenon, is introduced into the vacuum chamber. Inert gases are chosen because they do not react with the target material or other process gases. They also facilitate higher sputtering and deposition rates due to their high molecular weight.
3. Application of High Voltage
A high voltage is applied to the gas within the chamber. For argon, which is commonly used, the ionization potential is around 15.8 electron volts (eV). This high voltage ionizes the gas atoms, creating a plasma.
4. Role of Magnetron in Plasma Generation
In magnetron sputtering, a closed magnetic field is overlaid on the target surface. This magnetic field enhances the efficiency of plasma generation by increasing the probability of collisions between electrons and argon atoms near the target surface.
Enhancing Plasma Generation with Magnetron
Magnetic Field Enhancement
The magnetic field traps electrons, causing them to spiral around the target material. These electrons collide with nearby gas atoms, ionizing them and sustaining the plasma. This collision cascade generates secondary electrons, which further boost the plasma production and density.
Sputtering Process
The generated plasma contains positively charged ions. These ions are accelerated towards the negatively charged target by an electrical field. The impact of these high-energy ions on the target surface dislodges atoms from the target.
Deposition on Substrate
The dislodged atoms travel from the target to the substrate, where they condense and form a thin film. The substrate is typically placed in a position to ensure uniform coating, which may involve the use of a rotating or translating substrate holder.
Conclusion
The creation of plasma in magnetron sputtering is a dynamic process involving gas ionization, application of high voltage, and the strategic use of a magnetic field to enhance and sustain the plasma. This plasma then facilitates the sputtering process, where target atoms are ejected and deposited onto a substrate, forming a thin film.
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